鈍角三角形的邊線向量與內部向量探討及其在二維元件模擬之應用;Finding internal vector from the edge vector in obtuse triangle element for 2D Semiconductor Device Simulation

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/72088

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/72088

Title:	鈍角三角形的邊線向量與內部向量探討及其在二維元件模擬之應用;Finding internal vector from the edge vector in obtuse triangle element for 2D Semiconductor Device Simulation
Authors:	沈韋廷;Shen,Wei-ting
Contributors:	電機工程學系
Keywords:	半導體模擬;二維;semiconductor simulation;two-dimensional
Date:	2016-06-28
Issue Date:	2016-10-13 14:25:45 (UTC+8)
Publisher:	國立中央大學
Abstract:	本篇論文中，我們利用C語言模擬半導體元件特性。發現在切割網格時會如果出現180°切角，這會造成模擬上的誤差，而為了減少這誤差產生，我們將180°切角切割成不同角度，其中會出現鈍角三角形網格，所以我們開發了鈍角三角形模組來解決這問題。先利用單一鈍角三角形模組驗證，再經由模擬電阻與實際電阻值比較，及二極體的模擬驗證來確保模擬的正確性，最後應用在包含鈍角三角形網格的相關應用，例如:MOS電容器、180°切角的改善、局部網格加密時會出現的180°切角問題，都不會造成過大的誤差，並且成功改善了鈍角三角形網格模擬上的誤差。;In this thesis, we use C language to simulate semiconductor device characteristics. We found that the 180°-angle mesh will cause simulation problem. It may have a triangle mesh with an obtuse angle if we divide the 180° angle into two angles. In order to simulate the obtuse triangle mesh, it’s necessary to develop an obtuse triangle model for 2D device simulation. The validity of a single obtuse triangle model is verified by numerical experiment. We simulate a resister and compare its result to the theoretical value. Finally, applying this obtuse model to many applications, such as MOS capacitor, 180°-angle problem, in mesh regrid.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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