1T1R憶阻器記憶體的 邊界電流識別和可靠性增強技術;Boundary Current Identification and Reliability-Enhancement Techniques for 1T1R Memristor Memories

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Title:	1T1R憶阻器記憶體的邊界電流識別和可靠性增強技術;Boundary Current Identification and Reliability-Enhancement Techniques for 1T1R Memristor Memories
Authors:	林姿穎;LIN, TZU-TING
Contributors:	電機工程學系
Keywords:	憶阻器;記憶體;memristor;memory
Date:	2016-12-22
Issue Date:	2017-01-23 17:09:53 (UTC+8)
Publisher:	國立中央大學
Abstract:	憶阻器被認為是用來替代未來非揮發性記憶體的一種非揮發性裝置。對於憶阻器記憶體而言，需要有參考電流來區分高阻抗和低阻抗。因此參考電流對於憶阻器的良率和可靠度有很大的衝擊，所以參考電流的設置是非常重要的。如果我們可以找到高阻抗跟低阻抗的邊界電流，我們就可以設置更佳的參考電流。因此，我們需要有可找到邊界電流的有效方法。在這篇論文當中，我們提出一個測試方法去找到1T1R憶阻器記憶體的高阻抗跟低阻抗邊界電流。如此一來，使用者可以藉由邊界電流設置更好的參考電流。實驗結果顯示，如果使用我們提出的測試方法，我們可以減少10%的憶阻器被讀取錯誤。另一方面，高阻抗跟低阻抗的比值會隨者使用的時間越久而下降，為了解決這個問題，我們針對1T1R憶阻器記憶體提出一個線上監測和調校技術(OMT)。這種技術可以有效地延長記憶體的讀/寫週期。實驗結果顯示，OMT技術可以擴展憶阻器存儲器的壽命從10^5到10^6個存取周期。 ;Abstract Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF ) state from the low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. If we can identify the boundary currents of ROFF and RON, a good reference current can be set. Therefore, effective methods for identifying the boundary currents of memristor memories are needed. In this thesis, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states of 1T1R memristor memories. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if the test method is used to identify the boundary currents, 10% memristor cells which may be read incorrectly due to process variation for ROFF/RON =3 can be eliminated. On the other hand, the ROFF/RON resistance ratio will decrease with the increasing of the read/write cycles in use. This results in the reliability issue. To cope with this issue, we propose a online monitoring and tuning(OMT) technique for the 1T1R memristor memories. The OMT technique can effectively prolong the read/write cycles of the memristor memories. Simulation results show that if the OMT technique can extend the lifetime of the memristor memory from 105 to 106 access cycles.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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