能源議題是近年來最重要的議題之一，目前人類最常使用的火力發電及核能發電都會產生無法利用的熱能，若是能夠利用熱電材料將這些熱能轉換成為電能，將能夠更有效的使用這些能源。 本研究使用輕摻雜之矽晶片，先在未拋光面鍍上鎳，進行矽化鎳反應後，利用一步金屬輔助化學蝕刻製作奈米線，進行P/N-type摻雜後進行封裝，量測範圍從室溫到473K，探討其熱電特性。 ;The energy issue is one of the most important issues in recent years. At present, the most commonly used thermal power generation and nuclear power generation will generate unutilized heat energy. If it can convert these thermal energy into electrical energy by using thermoelectric materials, it will be able to use these energy more effectively. In this study, a light-doped wafer was used. First, nickel was plated on the unpolished surface. After the silicide reaction, the nanowire was fabricated by one-step metal-assisted chemical etching, and the nanowire was doped and packaged. The thermoelectric properties measured was from room temperature to 473K.
