English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 41632730      線上人數 : 3723
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/86610


    題名: 基於特徵分析識別晶圓圖刮痕樣態;Through Feature based Analysis to Recognize Wafer Map Scratch Pattern
    作者: 吳嘉峻;Wu, Chia-Chun
    貢獻者: 電機工程學系
    關鍵詞: 晶圓圖;錯誤樣態辨識;特徵分析;Wafer map;Pattern recognition;Feature based analysis
    日期: 2021-07-16
    上傳時間: 2021-12-07 13:01:28 (UTC+8)
    出版者: 國立中央大學
    摘要: 本篇論文中以特徵分析的方式判別晶圓圖的刮痕錯誤樣態,透過霍夫變換尋找晶圓圖上直線及弧線的缺陷。我們所使用的實際晶圓為台積電所提供的WM-811K晶圓資料庫,而錯誤樣態可分以下九種,Center、Donut、Scratch、Edge-Ring、Edge-Loc、Loc、Near-Full、Random、None。而本篇論文為判別Scratch的部分。
    首先,我們將晶圓圖進行降噪的動作,將晶圓圖上有離散的瑕疵點移除,把相較明顯的群聚點留於晶圓圖。而在降噪後將晶圓圖輸入圖轉換為灰階圖案,並且將晶圓圖調整縮放至統一格式陣列,使之於霍夫變換時便於參數設定。
    接著,在找尋晶圓圖上直線的樣態時,我們採用極座標系的方程式而非直線方程式,避免當直線在垂直於平面座標系X軸時,斜率為無限大而無法計算。而在找尋晶圓圖上弧線的樣態時,則採用橢圓方程式進行計算,藉由這兩種公式套用於霍夫變換演算法進行晶圓圖上刮痕圖案的尋找,達到以基於特徵分析的方式識別晶圓圖刮痕樣態。
    最後以這兩種霍夫變換的方式識別刮痕樣態,在WM-811K晶圓圖資料庫中取部分晶圓圖做測試,並以Accuracy、Precision、Recall的數值表現來顯示本論文模型的判斷準確度。
    ;In this paper, we use feature analysis to identify the scratch errors of the wafer map, and use the Hough transform to find the defects of straight lines and arcs on the wafer map. The actual wafer we used is the WM-811K wafer database provided by TSMC, and the error patterns can be divided into the following nine types: Center, Donut, Scratch, Edge-Ring, Edge-Loc, Loc, Near-Full, Random, None. And this paper is the part to distinguish Scratch.
    First, we perform a noise reduction operation on the wafer map, remove discrete defects on the wafer map, and leave the more obvious cluster points on the wafer map. After the noise is reduced, the wafer map input map is converted into a gray-scale pattern, and the wafer map is adjusted and scaled to a uniform format array, so that it is convenient for parameter setting during Hough transformation.
    Then, when looking for the shape of the straight line on the wafer map, we use the equation of the polar coordinate system instead of the linear equation to avoid that when the straight line is perpendicular to the X axis of the plane coordinate system, the slope is infinite and cannot be calculated. When looking for the shape of the arc on the wafer map, the ellipse equation is used to calculate. By applying these two formulas to the Hough transform algorithm to find the scratch pattern on the wafer map, it can be achieved based on feature analysis. Ways to identify the scratches on the wafer map.
    Finally, the scratch patterns are identified by these two Hough transform methods, and part of the wafer map is taken from the WM-811K wafer map database for testing, and the numerical performance of Accuracy, Precision, and Recall is used to show the model of this paper. Judgment accuracy.
    顯示於類別:[電機工程研究所] 博碩士論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML77檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明