增強型異質結構高速移導率電晶體大信號模型之建立及其在微波放大器之應用; A Large-signal Mode for E-PHEMT and It Application in Microwave Amplifier Design

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9317

Title:	增強型異質結構高速移導率電晶體大信號模型之建立及其在微波放大器之應用;A Large-signal Mode for E-PHEMT and It Application in Microwave Amplifier Design
Authors:	王志偉;Zhi-Wei Wang
Contributors:	電機工程研究所
Keywords:	異質結構場效電晶體;砷化鎵;小信號模型;大信號模型;放大器;GaAs;Small-signal model;Large-signal model;E-PHEMT;Amplifier
Date:	2002-06-17
Issue Date:	2009-09-22 11:45:17 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	隨著微波技術的日趨重要，對主動元件的要求也愈來愈高，而傳統砷化鎵金屬-半導體電晶體(MESFET)在功率上的表現已不敷使用。異質結構高速場效電晶體(HEMT)、異質接面雙載子電晶體(HBT)在高頻電路的角色愈來愈顯重要。本論文是以增強型異質結構高速移導率電晶體(enhancement-mode HEMT)元件特性探討與模型化技術為主。本論文首先討論異質結構高速場效電晶體的工作原理，探討元件的非線性特性，包括功率增益壓縮、諧波失真等。並利用Cold FET等量測方法萃取元件內外部等效電路參數以建立小訊號模型，對內部本質元件的非線性特性加以分析。之後，結合電壓-電流方程式以及非線性電阻、電容方程式，建立元件之大信號模型，並與量測之直流、高頻功率特性及線性度作比較。最後，我們將大信號模型實際用於電路設計，設計一2.4GHz微波放大器。 In this thesis,the device characteristics and device modeling technologies of enhancement-mode pHEMTs are investigated. Firstly, the device physics and non-linear characteristics of enhancement-mode pHEMTs are studied, including gain compression and harmoic distortion. By cold-FET measurement and Yang-Long dc measurement, the extrinsic elements of small-signal model can be estimated accurately. The other intrinsic parameters of small-signal can be determined based on the matrix transformation with the on wafer measured S-parameters.The intrinsic model elements, such as Cgs, Cgd, Cds, Rds, Gm,τ and Ri can be extracted under different Vds and Vgs bias points. In this study we propose a modified large-signal model for enhancement-mode pHEMTs, which is based on the conventional Curtice model. The modified large-signal model is based on the structure of Curtice model. In order to take the device non-linear behaviors into consideration, instead of using traditional junction capacitances (Cgs, Cgd), channel resistance (Ri), and output resistance (Rds), we propose suitable non-linear equations to describe these elements, which are the functions of Vgs and Vds. We also examine the accuracy of the large-signal model. Using scalable parasitic components attached to the modified large-signal model, a completed RF large-signal model covering various gate-widths can correctly predict the device’s dc and rf characteristics. Using thise model, a 2.4 GHz microwave amplifier was designed and tested.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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