;The thesis presents a Ka-band Continuous J power amplifier in 0.15-µm InGaAs pHEMT process and a X-band Continuous F power amplifier in 0.25-µm GaN/SiC HEMT process. The RF transceiver modules integrate commercial ICs onto printed circuit boards, with PCB materials utilizing RO-FR4 four-layer composite circuit boards. The first chip presents a Ka-band two-stage PA in GaAs process. The high efficiency and broadband performances are achieved by using continuous J that is matched for fundamental and second harmonic impedances. The measured maximum small-signal gain is 14.9 dB with a 1-dB bandwidth from 24.5 to 30.2 GHz, an output saturated power of 25.8 dBm, an output 1-dB compression point (OP1dB) of 25.6 dBm, and a peak PAE of 30.2 %. The chip size is 1.08mm2. The second chip presents a X-band broadband high efficiency power amplifier in GaN/SiC process. According to the analysis of large signal power gain, the appropriate bias voltage is selected to improve the AM-AM linearity. The high-efficiency and broadband performances are achieved by using continuous Class-F mode for the fundamental to third harmonics output matching network. The measured maximum small-signal gain is 18.7 dB with a 1-dB bandwidth from 8 to 11.4 GHz, an output saturated power of 32.8 dBm, an output 1-dB compression point (OP1dB) of 31.4 dBm, and a peak PAE of 26.7 %. The chip size is 2.5 mm2. Chapter 4 presents a Ka-band up/down frequency conversion module. The AWMF-0188 chip is integrated onto the printed circuit board. The module not only includes transmit and receive modes but also incorporates a bypass mode, offering highly integrated advantages. The maximum transmit bypass gain is 7.4 dB, and the maximum receive bypass gain is 7.6 dB. In transmit mode, the 3-dB bandwidth at the RF end ranges from 24 to 30 GHz. At 24 GHz, the conversion gain is 11.1 dB. In receive mode, the optimal conversion gain is 8.3 dB when the intermediate frequency output is at 4 GHz and a noise figure of 17.9 dB. The module area is 44.6 × 44 mm2.
