應用於單電子電晶體之矽/鍺量子點研製; Study of Forming Si/Ge Quantum dots for Single-Electron Devices

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/9732

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9732

Title:	應用於單電子電晶體之矽/鍺量子點研製;Study of Forming Si/Ge Quantum dots for Single-Electron Devices
Authors:	林上偉;Shang-Wei Lin
Contributors:	電機工程研究所
Keywords:	小線寬間隙壁自我對準技術;庫倫震盪效應;庫倫阻斷效應;矽鍺;量子點;單電子電晶體;Single-Electron Transistor(SET);Quantum dot;Coulomb blockade Effect;Narrow spacer self-alignment(NSSA));Coulomb Oscillation Effcet
Date:	2004-07-09
Issue Date:	2009-09-22 11:54:44 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本論文之研究重點，在於發展可應用於矽基材單電子電晶體之量子點(線)的研製。有鑑於其他相關研究單位所發展的量子點製程，大都未考量製程中的穩定性、再現性、成本考量以及與現今半導體製程的相容性；故本論文將重點放在可相容於目前傳統的LSI製程，以及盡量提高製程的穩定性與再現性，並且降低製程的成本，發展出數種在傳統矽基材下可行的量子點(線)製作方式。 In this thesis, the technique of forming Si & Ge quantum dots for Single-electron devices will be proposed. The advantages of the technique are well controllable, reproducible and compatible with traditional CMOS process.
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

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