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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/51999


    題名: Testing Random Defect and Process Variation Induced Comparison Faults of TCAMs with Asymmetric Cells
    作者: Li,JF;Huang,YJ;Hu,YJ
    貢獻者: 電機工程學系
    關鍵詞: MEMORIES
    日期: 2010
    上傳時間: 2012-03-28 10:12:57 (UTC+8)
    出版者: 國立中央大學
    摘要: This paper presents a march-like test T(AC-P) to cover comparison faults of ternary content addressable memories (TCAMs) with asymmetric cells. The T(AC-P) only requires 4N Write operations and (3N + 2B) Compare operations for an N x B-bit TCAM with Hit and priority address encoder outputs. We show that the test also can cover search time failures induced by process variation in the comparison circuit of a TCAM. Furthermore, a test T(MF) for match failures induced by the process variation in the comparison circuit of a TCAM is also presented.
    關聯: IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
    顯示於類別:[電機工程學系] 期刊論文

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