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類別	日期	題名	作者
[電機工程研究所] 期刊論文	2004	Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors	Hwu,MJ; Chju,HC; Yang,SC; Chan,YJ; Chang,LB
[電機工程研究所] 期刊論文	2004	K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology	Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chiou,HK; Chan,YJ
[電機工程研究所] 期刊論文	2004	Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication	Lin,CK; Wang,WK; Hwu,MJ; Chan,YJ
[電機工程研究所] 期刊論文	2003	0.2-mu m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications	Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chan,YJ
[電機工程研究所] 期刊論文	2003	A novel double-recessed 0.2-mu m T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication	Hwu,MJ; Chiu,HC; Yang,SC; Chan,YJ
[電機工程研究所] 期刊論文	2003	High performance BCB-bridged AlGaAs/InGaAs power HFETs	Chiu,HC; Yeh,TJ; Yang,SC; Hwu,MJ; Chan,YJ
[電機工程研究所] 期刊論文	2003	Submicron RIE recessed InGaP/InGaAs doped-channel FETs	Yang,SC; Chiu,HC; Hwu,MJ; Wang,WK; Lin,CK; Chan,YJ
[電機工程研究所] 期刊論文	2002	Enhanced power performance of enhancement-mode Al0.5Ga0.5As/In0.15Ga0.85As pHEMTs using a low-k BCB passivation	Chiu,HC; Hwu,MJ; Yang,SC; Chan,YJ