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日期	題名	作者
2011	Elasticity of tephroite (alpha-Mn(2)SiO(4)) and a comparison of the elastic properties of silicate olivines	Lin,CC; Chen,CC
2009	Electric and anomalous magnetic dipole moments of the muon in the MSSM	Cheung,K; Kong,OCW; Lee,JS
2008	Electric dipole moments in the MSSM reloaded	Ellis,John; Lee,Jae Sik; Pilaftsis,Apostolos
2025-01-22	Electric Field Induced Spinor Pair Production in Global (A)dS2	林冠言; Lin, Kuan-Yen
2008	Electric fields and electron energies in sprites and temporal evolutions of lightning charge moment	Adachi,T.; Hiraki,Y.; Yamamoto,K.; Takahashi,Y.; Fukunishi,H.; Hsu,R-R; Su,H-T; Chen,A. B.; Mende,S. B.; Frey,H. U.; Lee,L. C.
2008	An electric resistivity study of the Chelungpu fault in the Taichung area, Taiwan	Cheng,Ping-Hu; Ger,Yueh-Iuan; Lee,Szu-Lin
2002	An electric resistivity study of the Chelungpu fault in the Tsaotun area, central Taiwan	Cheng,PH; Yang,CH; You,JI; Shieh,JS
1987	ELECTRIC-FIELD ENHANCEMENT NEAR-SURFACE IRREGULARITIES	LEE,FT; LEE,KC; LAI,SK; CHENG,YS; HSU,TM
2003	Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn	Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Overberg,ME; Thaler,GT; Abernathy,CR; Pearton,SJ; Lee,CM; Chyi,JI; Wilson,RG; Zavada,JM
1997	Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctions	Jen,TS; Shin,NF; Laih,LH; Chen,YA; Hong,JW; Chang,CY
2004	Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes	Polyakov,AY; Smirnov,NB; Govorkov,AV; Kim,J; Ren,F; Thaler,GT; Frazier,RM; Gila,BP; Abernathy,CR; Pearton,SJ; Buyanova,IA; Rudko,GY; Chen,WM; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM
1989	ELECTRICAL AND MAGNETIC STUDIES ON GRAIN-BOUNDARY SEGREGATION IN A NI-3AT.PERCENT-SN ALLOY	YAO,YD; CHUANG,TH; LEE,CK
1999	Electrical and optical changes in the near surface of reactively ion etched n-GaN	Chen,JY; Pan,CJ; Chi,GC
2000	Electrical and optical characteristics of the GaN light-emitting diodes with multiple-pair buffer layer	Yang,CC; Wu,MC; Chuo,CC; Chyi,JI; Lin,CF; Chi,GC
2008	Electrical and optical properties of TiO2-doped ZnO films prepared by radio-frequency magnetron sputtering	Chung,Jeng-Lin; Chen,Jyh-Chen; Tseng,Chung-Jen
2003	Electrical characteristics of a-SiGe : H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact	Lin,CS; Yeh,RH; Li,IX; Hong,JW
1998	Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers	Sheu,JK; Su,YK; Chang,SJ; Chi,GC; Lin,KB; Liu,CC; Chiu,CC
2001	Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures	Polyakov,AY; Smirnov,NB; Govorkov,AV; Zhang,AP; Ren,F; Pearton,SJ; Chyi,JI; Nee,TE; Chou,CC; Lee,CM
2007	Electrical structures of the source area of the 1999 Chi-Chi, Taiwan, earthquake: Spatial correlation between crustal conductors and aftershocks	Chen,Chien-Chih; Chi,Sung-Ching; Chen,Chow-Son; Yang,Chieh-Hou
2006	Electrical transport properties of single GaN and InN nanowires	Chih-Yang Chang,Gou-Chung Chi,Wei-Ming Wang,Li-Chyong Chen ,Kuei-Hsien Chen,F. Ren and S. J. Pearton
1994	ELECTRICAL-DISCHARGE MACHINING CHARACTERISTICS OF CONDUCTIVE ALUMINA-BASED CERAMICS	YAN,BH; TSAI,DC
2003	Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry	Ting,YS; Chen,CC; Sheu,JK; Chi,GC; Hsu,JT
2009	Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer	Chen,JC; Sheu,GJ; Hwu,FS; Chen,HI; Sheu,JK; Lee,TX; Sun,CC
2011	Electrically controllable metal-insulator-like transition in nanoparticle compacts	Wang,CW; Wu,CM; Karna,SK; Li,CY; Hsu,CK; Li,CHC; Li,WH
1997	Electrically nulled interferometric sensor based on triangular phase modulation	Chien,PY; Chang,YS; Chang,MW

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