摘要： Excellent passivation of an n-type Czochralski crystalline silicon surface is made possible by the deposition of hydrogenated silicon carbide (Si1−xCx:H) layers in the electron cyclotron resonance chemical vapor deposition. We investigate the structural effect with various CH4/SiH4 dilution ratios, and the lowest effective surface recombination velocity (21.03 cm/s) that can be obtained. We also demonstrate that the Voc can be improved more than 200 mV by inserting Si1−xCx:H layers to form hetero-junction with intrinsic thin layer (HIT) solar cells. The conversion efficiency of the planar HIT solar cell with μc-Si emitter can reach 13%. 出版日期： 2012-12-10 出處： Applied physics letters, 2012-12, Vol.101 (24) 資源來源： AIP Journals (American Institute of Physics) 識別號： ISSN: 0003-6951 識別號： EISSN: 1077-3118 識別號： DOI: 10.1063/1.4770308
