摘要： A normally-off InAlN/GaN MIS-HEMT with HfZrO sub(2) gate insulator was realized and investigated. By using N sub(2)O plasma treatment beneath the gate region, 13 nm InAlN Schottky layer was oxidized to AlON sub(x) + 4 nm InAlN Schottky layer. The strong polarization induced carriers in traditional InAlN/GaN 2 DEG quantum well was reduced for enhancement-mode operation. High-k thin film HfZrO sub(2) was used for gate insulator of E-mode device to further suppress gate leakage current and enhance device gate operation range. The maximum drain current of E-mode InAlN/GaN MIS-HEMT was 498 mA/mm and this value was higher than previous published InAlN/GaN E-mode devices. The measurement results of low-frequency noise also concluded that the low frequency noise is attributed to the mobility fluctuation of the channel and N sub(2)O plasma treatment did not increase fluctuation center of gate electrode. 出版日期： 2015-01-01 出處： Microelectronics and reliability, 2015-01, Vol.55 (1), p.48-51 資源來源： ScienceDirect (Elsevier) Journals 識別號： ISSN: 0026-2714 識別號： DOI: 10.1016/j.microrel.2014.09.026
