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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32374

    Title: 0.13-mu m RF CMOS and varactors performance optimization by multiple gate layouts
    Authors: Ho,CC;Kuo,CW;Chan,Y;Lien,WY;Guo,JC
    Contributors: 電機工程研究所
    Keywords: 0.18-MU-M
    Date: 2004
    Issue Date: 2010-07-06 18:25:37 (UTC+8)
    Publisher: 中央大學
    Abstract: 0.13-mum radio frequency (RF) CMOS devices with multifinger gate structure have been fabricated by the standard logic process, and the measured effective gate-length is 80 nm. Extensive RF characterization has been done to obtain cutoff frequency (f(T)),
    Appears in Collections:[電機工程研究所] 期刊論文

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