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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32607


    Title: High power density of AlGaAs/InGaAs doped-channel FETs with low DC power supply
    Authors: Chiu,HC;Yang,SC;Chien,FT;Chan,YJ
    Contributors: 電機工程研究所
    Keywords: HIGH-EFFICIENCY;DESIGN;HEMTS
    Date: 2001
    Issue Date: 2010-07-06 18:33:49 (UTC+8)
    Publisher: 中央大學
    Abstract: High power density Al(0.3)G(0.7)As/In0.15Ga0.85As doped-channel FETs (modified DCFETs) biased at 3V for 2.4GHz wireless communication applications are proposed. A planar Si delta -doped laver is inserted inside the wide-bandgap undoped AlGaAs layer to red
    Relation: ELECTRONICS LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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