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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32608


    Title: High power In0.49Ga0.51P/In0.15Ga0.85As heterostructure doped-channel FETs
    Authors: Chiu,HC;Yang,SC;Chan,YJ;Lin,HH
    Contributors: 電機工程研究所
    Keywords: HIGH-EFFICIENCY;PERFORMANCE;DESIGN;HEMTS
    Date: 2001
    Issue Date: 2010-07-06 18:33:51 (UTC+8)
    Publisher: 中央大學
    Abstract: A high barrier Schottky gate on InGaP/InGaAs doped-channel FETs (DCFETs) provides a high current density, high gate-to-drain breakdown voltage and a better linear operation over a wide gate bias range. However, these doped-channel devices are limited by a
    Relation: IEICE TRANSACTIONS ON ELECTRONICS
    Appears in Collections:[Graduate Institute of Electrical Engineering] journal & Dissertation

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