Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells

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Title:	Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells
Authors:	Chuo,CC;Lee,CM;Chyi,JI
Contributors:	電機工程研究所
Keywords:	CONTINUOUS-WAVE OPERATION;LASER-DIODES;VACANCIES
Date:	2001
Issue Date:	2010-07-06 18:34:10 (UTC+8)
Publisher:	中央大學
Abstract:	Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of similar to0.23 and similar to0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperatur
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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