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Showing items 376-400 of 951. (39 Page(s) Totally) << < 11 12 13 14 15 16 17 18 19 20 > >> View [10|25|50] records per page

Date	Title	Authors
2005	Aircraft type recognition in satellite images	Hsieh,JW; Chen,JM; Chuang,CH; Fan,KC
2005	64-bit high-performance power-aware conditional carry adder design	Cheng,KH; Cheng,SW
2004	Function approximation via particular input space partition and region-based exponential membership functions	Teng,YW; Wang,WJ; Chiu,CH
2004	Further improvements in equivalent-circuit model with levelized incomplete LU factorization for mixed-level semiconductor device and circuit simulation	Dai,JF; Chang,CC; Li,SJ; Tsai,YT
2004	Fuzzy controller design for discrete controllability canonical Takagi-Sugeno fuzzy systems	Chang,WJ; Sun,CC; Chung,HY
2004	GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates	LaRoche,JR; Luo,B; Ren,F; Baik,KH; Stodilka,D; Gila,B; Abernathy,CR; Pearton,SJ; Usikov,A; Tsvetkov,D; Soukhoveev,V; Gainer,G; Rechnikov,A; Dimitriev,V; Chen,GT; Pan,CC; Chyi,JI
2004	High linearity InGaP/GaAs power HBTs by collector design	Wang,CM; Hsu,HT; Shu,HC; Hsin,YM
2004	High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes	Chen,GT; Pan,CC; Fang,CS; Huang,TC; Chyi,JI; Chang,MN; Huang,SB; Hsu,JT
2004	Impact of ionospheric scintillations on LEO satellite DS-CDMA communication system	Li,SY; Liu,CH
2004	Improved CMOS microwave linearity based on the modified large-signal BSIM model	Lai,HH; Hsiao,CC; Kuo,CW; Chan,YJ; Sato,T
2004	Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors	Hwu,MJ; Chju,HC; Yang,SC; Chan,YJ; Chang,LB
2004	InGaN-GaN MQW LEDs with current blocking layer formed by selective activation.	Lee,CM; Chuo,CC; Liu,YC; Chen,IL; Chyi,JI
2004	K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology	Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chiou,HK; Chan,YJ
2004	Low damage, Cl-2-based gate recess etching for 0.3-mu m gate-length AlGaN/GaN HEMT fabrication	Wang,WK; Li,YJ; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI
2004	Low power and cost effective VLSI design for an MP3 audio decoder using an optimised synthesis-subband approach	Tsai,TH; Yang,YC
2004	Low-k BCB passivation on AlGaN-GaN HEMT fabrication	Wang,WK; Lin,CH; Lin,PC; Lin,CK; Huang,FH; Chan,YJ; Chen,GT; Chyi,JI
2004	Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes	Pan,CC; Lee,CM; Liu,JW; Chen,GT; Chyi,JI
2004	MEXTRAM modeling of Si-SiGeHPTs	Yuan,F; Shi,JW; Pei,ZW; Liu,CW
2004	MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors	Irokawa,Y; Nakano,Y; Ishiko,M; Kachi,T; Kim,J; Ren,F; Gila,BP; Onstine,AH; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI
2004	Modeling the effects of ionospheric scintillations on LEO satellite communications	Li,SY; Liu,CH
2004	Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions	Cheng,YC; Lin,EC; Wu,CM; Yang,CC; Yang,JR; Rosenauer,A; Ma,KJ; Shi,SC; Chen,LC; Pan,CC; Chyi,JI
2004	Neuro-sliding mode control with its applications to seesaw systems	Tsai,CH; Chung,HY; Yu,FM
2004	Nonlinear behaviors of low-temperature-grown GaAs-based photodetectors around 1.3 mu m telecommunication wavelength	Shi,JW; Chen,YH; Gan,KG; Chiu,YJ; Bowers,JE; Tien,MC; Liu,TM; Sun,CK
2004	Novel structure of an arrayed-waveguide grating multiplexer with flat spectral response	Lee,TH; Tu,KH; Lee,CT
2004	On the origin of spin loss in GaMnN/InGaN light-emitting diodes	Buyanova,IA; Izadifard,M; Chen,WM; Kim,J; Ren,F; Thaler,G; Abernathy,CR; Pearton,SJ; Pan,CC; Chen,GT; Chyi,JI; Zavada,JM

Showing items 376-400 of 951. (39 Page(s) Totally) << < 11 12 13 14 15 16 17 18 19 20 > >> View [10|25|50] records per page