邻近类别 研究計畫 [36/36] 博碩士論文 [3021/3021] 考古題 [397/397] 类别统计 近3年内发表的文件: 0(0.00%) 含全文笔数: 951(100.00%) 文件下载次数统计 下载大于0次: 951(100.00%) 下载大于100次: 951(100.00%) 全文下载总次数: 532854(21.28%) 最后更新时间: 2026-02-09 20:10 上传排行 数据加载中..... 下载排行 数据加载中..... 最近上传 Wide-stopband microstrip bandpass f... Vertical-cavity surface-emitting la... Thermal stability improvement by us... The improvement of GaN p-i-n UV sen... Study of tunneling currents through... Study of carrier transport by penta... Sliding mode control for unmatched ... Simulation of Si n-MOS inversion la... Si-diffused GaN for enhancernent-mo... Si/SiGe-based edge-coupled photodio...

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显示项目326-350 / 951. (共39页) << < 9 10 11 12 13 14 15 16 17 18 > >> 每页显示[10|25|50]项目

日期	题名	作者
2005	Electrically-driven spontaneous emission spectrum of a single quantum dot	Kuo,DMT; Chang,YC
2005	Electroreflectance studies of InAs quantum dots with InxGa1-xAs capping layer grown by metalorganic chemical vapor deposition	Chang,WH; Chen,HY; Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Yeh,NT
2005	Enhanced light emission from InAs quantum dots in single-defect photonic crystal microcavities at room temperature	Chen,WY; Chang,WH; Chang,HS; Hsu,TM; Lee,CC; Chen,CC; Luan,PG; Chang,JY; Hsieh,TP; Chyi,JI
2005	Fast decomposition of filterbanks for the state-of-the-art audio coding	Huang,SW; Tsai,TH; Chen,LG
2005	Feature-based error concealment for object-based video	Lee,PJ; Chen,HH; Wang,WJ; Chen,LG
2005	Floquet wave-based analysis of transient scattering from doubly periodic, discretely planar, perfectly conducting structures	Chen,NW; Lu,MY; Capolino,F; Shanker,B; Michielssen,E
2005	H-2/H-infinity robust static output feedback control design via mixed genetic algorithm and linear matrix inequalities	Sun,CC; Chung,HY; Chang,WJ
2005	High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-mu m wavelength	Wu,YS; Shi,JW; Wu,JY; Huang,FH; Chan,YJ; Huang,YL; Xuan,R
2005	High-speed, high-responsivity, and high-power performance of near-ballistic uni-traveling-carrier photodiode at 1.55-mu m wavelength	Shi,JW; Wu,YS; Wu,CY; Chiu,PH; Hong,CC
2005	High-temperature high-humidity and electrical static discharge stress effects on GaN p-i-n UV sensor	Liu,SS; Li,PW; Lan,WH; Lin,WJ
2005	Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector	Chiu,WY; Huang,FH; Wu,YS; Lin,DM; Chan,YJ; Chen,SH; Chyi,JI; Shi,JW
2005	Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280-320 nm) detection	Liu,SS; Li,PW; Lan,WH; Lin,WJ
2005	Infrared wavelength quantum communications based on single electron transistors	Kuo,DMT
2005	InGaAsN/GaAs quantum-well lasers using two-step and nitride passivation growth	Chiu,PC; Yeh,NT; Hong,CC; Hsieh,TP; Tsai,YT; Ho,WJ; Chyi,JI
2005	Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire	Lin,HF; Wu,CT; Chien,WC; Chen,SW; Kao,HL; Chyi,JI; Chen,JS
2005	Low resistance WSix-based ohmic contacts on n-type GaN	Pan,CC; Chen,MS; Lee,CM; Chyi,JI
2005	Multi-gigabit pre-emphasis design and analysis for serial link	Lin,CH; Tsai,CH; Chen,CN; Jou,SJ
2005	Noncoherent block detection of multiple-pulse equicorrelated modulation signals	Chung,CD; Cho,SM
2005	Optical control of the exciton charge states of single quantum dots via impurity levels	Chang,WH; Chang,HS; Chen,WY; Hsu,TM; Hsieh,TP; Chyi,JI; Yeh,NT
2005	Optical emission from individual InGaAs quantum dots in single-defect photonic crystal nanocavity	Chang,WH; Chen,WY; Chang,HS; Hsu,TM; Hsieh,TP; Chyi,JI
2005	Optical piezoelectric transducer for nano-ultrasonics	Lin,KH; Chern,GW; Yu,CT; Liu,TM; Pan,CC; Chen,GT; Chyi,JI; Huang,SW; Li,PC; Sun,CK
2005	Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrix	Liu,WS; Chyi,JI
2005	Optimal controller of a buck DC-DC converter using the uncertain load as stochastic noise	Hsieh,FH; Yen,NZ; Juang,YT
2005	Orthogonally multiplexed on-off-keyed amplitude and phase modulation families	Chung,CD; Liaw,HS
2005	Performance enhancement by using the n(+)-GaN cap layer and gate recess technology on the AlGaN/GaN HEMTs fabrication.	Wang,WK; Lin,PC; Lin,CH; Lin,CK; Chan,YJ; Chen,GT; Chyi,JI

显示项目326-350 / 951. (共39页) << < 9 10 11 12 13 14 15 16 17 18 > >> 每页显示[10|25|50]项目