Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

NCUIR > College of Electrical Engineering & Computer Science > Department of Electrical Engineering > journal & Dissertation > Item 987654321/51968

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/51968

Title:	Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
Authors:	Wang,SY;Chiang,PY;Chang,CM;Chen,SH;Chyi,JI
Contributors:	電機工程學系
Keywords:	DHBTS;BASE
Date:	2010
Issue Date:	2012-03-28 10:12:07 (UTC+8)
Publisher:	國立中央大學
Abstract:	The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density (K(SURF)) than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S(0) is deduced for the DHBT with a higher Sb content in the InGaAsSb base.
Relation:	IEEE ELECTRON DEVICE LETTERS
Appears in Collections:	[Department of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	388	View/Open

社群 sharing