Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

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題名:	Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
作者:	Wang,SY;Chiang,PY;Chang,CM;Chen,SH;Chyi,JI
貢獻者:	電機工程學系
關鍵詞:	DHBTS;BASE
日期:	2010
上傳時間:	2012-03-28 10:12:07 (UTC+8)
出版者:	國立中央大學
摘要:	The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density (K(SURF)) than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S(0) is deduced for the DHBT with a higher Sb content in the InGaAsSb base.
關聯:	IEEE ELECTRON DEVICE LETTERS
顯示於類別:	[電機工程學系] 期刊論文

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