Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors

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题名:	Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
作者:	Wang,SY;Chiang,PY;Chang,CM;Chen,SH;Chyi,JI
贡献者:	電機工程學系
关键词:	DHBTS;BASE
日期:	2010
上传时间:	2012-03-28 10:12:07 (UTC+8)
出版者:	國立中央大學
摘要:	The surface recombination behavior of a series of InAlAs/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) is investigated. It is found that the InGaAsSb base HBTs have lower emitter periphery surface recombination current density (K(SURF)) than the HBT with an InGaAs base. It is attributed to the type-I band lineup at the B-E junction and the surface pining of the antimonide base layer. A lower S(0) is deduced for the DHBT with a higher Sb content in the InGaAsSb base.
關聯:	IEEE ELECTRON DEVICE LETTERS
显示于类别:	[電機工程學系] 期刊論文

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