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    显示项目261-270 / 951. (共96页)
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    日期题名作者
    2006 Pinholelike defects in multistack 1.3 mu m InAs quantum dot laser Liu,WS; Chang,HL; Liu,YS; Chyi,JI
    2006 RF power characteristics of SiGeHBTs at cryogenic temperatures Hsieh,Meng-Wei; Hsin,Yue-Ming; Liang,Kung-Hao; Chan,Yi-Jen; Tang,Denny
    2006 Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs Tang,WB; Hsin,YM
    2006 Robustness analysis of discrete time-delay systems Huang,CP; Juang,YT
    2006 Robust integration for speech features Huang,Kuo-Chang; Juang,Yau-Tarng; Chang,Wen-Chieh
    2006 Room-temperature transient carrier transport in germanium single-hole/electron transistors Liao,WM; Li,PW; Kuo,DMT; Lai,WT
    2006 Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance Shi,JW; Chiu,PH; Huang,FH; Wu,YS; Lu,JY; Sun,CK; Liu,CW; Chen,PS
    2006 Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications Jang,S; Ren,F; Pearton,SJ; Gila,BP; Hlad,M; Abernathy,CR; Yang,H; Pan,CJ; Chyi,JI; Bove,P; Lahreche,H; Thuret,J
    2006 Simulation of Si n-MOS inversion layer with Schrodinger-Poisson equivalent circuit model Li,SJ; Chang,CC; Tsai,YT
    2006 Sliding mode control for unmatched uncertain systems with totally invariant property and exponential stability Tsai,YW; Mai,KH; Shyu,KK

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