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Showing items 381-390 of 951. (96 Page(s) Totally)
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Date
Title
Authors
2004
GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
LaRoche,JR
;
Luo,B
;
Ren,F
;
Baik,KH
;
Stodilka,D
;
Gila,B
;
Abernathy,CR
;
Pearton,SJ
;
Usikov,A
;
Tsvetkov,D
;
Soukhoveev,V
;
Gainer,G
;
Rechnikov,A
;
Dimitriev,V
;
Chen,GT
;
Pan,CC
;
Chyi,JI
2004
High linearity InGaP/GaAs power HBTs by collector design
Wang,CM
;
Hsu,HT
;
Shu,HC
;
Hsin,YM
2004
High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes
Chen,GT
;
Pan,CC
;
Fang,CS
;
Huang,TC
;
Chyi,JI
;
Chang,MN
;
Huang,SB
;
Hsu,JT
2004
Impact of ionospheric scintillations on LEO satellite DS-CDMA communication system
Li,SY
;
Liu,CH
2004
Improved CMOS microwave linearity based on the modified large-signal BSIM model
Lai,HH
;
Hsiao,CC
;
Kuo,CW
;
Chan,YJ
;
Sato,T
2004
Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors
Hwu,MJ
;
Chju,HC
;
Yang,SC
;
Chan,YJ
;
Chang,LB
2004
InGaN-GaN MQW LEDs with current blocking layer formed by selective activation.
Lee,CM
;
Chuo,CC
;
Liu,YC
;
Chen,IL
;
Chyi,JI
2004
K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology
Chiu,HC
;
Yang,SC
;
Lin,CK
;
Hwu,MJ
;
Chiou,HK
;
Chan,YJ
2004
Low damage, Cl-2-based gate recess etching for 0.3-mu m gate-length AlGaN/GaN HEMT fabrication
Wang,WK
;
Li,YJ
;
Lin,CK
;
Chan,YJ
;
Chen,GT
;
Chyi,JI
2004
Low power and cost effective VLSI design for an MP3 audio decoder using an optimised synthesis-subband approach
Tsai,TH
;
Yang,YC
Showing items 381-390 of 951. (96 Page(s) Totally)
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