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    Last Update: 2026-02-11 13:01


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    Showing items 776-800 of 951. (39 Page(s) Totally)
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    DateTitleAuthors
    1996 DC and microwave characteristics of In-0.3(AlxGa1-x)(0.7)As/In0.3Ga0.7As heterojunction bipolar transistors grown on GaAs Hwang,HP; Shieh,JL; Pan,JW; Chou,CC; Chyi,JI
    1996 Delay bound analysis for multiplexed traffic controlled by enhanced leaky bucket Wu,JS; Kuo,FJ; Sue,SW
    1996 Design of multi-connection shaper and enforcer for usage parameter control in ATM networks Kuo,FJ; Wu,JS
    1996 Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al0.3Ga0.7As/In(0.2)Gao(0.8)As heterostructures Yang,MT; Chan,YJ
    1996 Effects of dual leaky bucket parameters on cell loss ratio: Worst case analysis Wu,JS; Sue,SW
    1996 Effects of fading and partial-band noise jamming on a fast FH/BFSK acquisition receiver with noise-normalization combination Chung,CD; Huang,PC
    1996 Effects of finger width on large-area InGaAs MSM photodetectors Yuang,RH; Chyi,JI
    1996 Enhanced carrier and optical confinement of quantum well lasers with graded multi-quantum barriers Chyi,JI; Gau,JH; Wang,SK; Shieh,JL; Pan,JW
    1996 Enhanced device performance by unstrained In0.3Ga0.7As/In0.29Al0.71As doped-channel FET on GaAs substrates Yang,MT; Chan,YJ; Shieh,JL; Chyi,JI
    1996 Estimation of asymptotic stability region and sliding domain of uncertain variable structure systems with bounded controllers Shyu,KK; Chen,SR
    1996 GaAs-based In0.29Al0.71As/In0.3Ga0.7 as high-electron mobility transistors Chan,YJ; Wu,CS; Chyi,JI; Shieh,JL
    1996 High responsivity a-Si:H bottom-electrode metal-semiconductor-metal photodetector (BMSM-PD) Laih,LH; Chen,YA; Tsay,WC; Hong,JW
    1996 High-responsivity InGaAs metal-semiconductor-metal photodetectors with semi-transparent Schottky contacts Yuang,RH; Chyi,JI; Chan,YJ; Lin,W; Tu,YK
    1996 High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes Yuang,RH; Chien,YJ; Shieh,JL; Chyi,JI
    1996 High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield Yuang,RH; Chyi,JI; Lin,W; Tu,YK
    1996 Improving access delay fairness of DQDB MANs under overload condition Wu,JS; Hsieh,YT
    1996 In-0.52(AlxGa1-x)(0.48)As/In0.53Ga0.47As(0<=x<=1) heterostructure and its application on HEMTs Wu,CS; Chan,YJ; Chen,CH; Shieh,JL; Chyi,JL
    1996 Invariant handwritten Chinese character recognition using fuzzy ring data Tseng,DC; Chiu,HP; Cheng,JC
    1996 Mandarin speech recognition using segment-based cepstral comparison in noisy conditions Tung,SL; Juang,YT
    1996 Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates Chyi,JI; Shieh,JL; Pan,JW; Lin,RM
    1996 Monolithic microwave AlGaAs/InGaAs doped-channel FET switches Ke,LW; Chan,YJ; Chiang,YC
    1996 New methods to design an integral variable structure controller Wang,JD; Lee,TL; Juang,YT
    1996 Parallel event-driven MOS timing simulator on distributed memory multiprocessors Hsieh,WH; Jou,SJ; Su,CC
    1996 Performance analysis of voice data integrated CDMA system with QoS constraints Wu,JS; Lin,JR
    1996 Pole assignment of a family of matrices in a specified region Chung,HY; Shyu,CY