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"Hwu,MJ"的相关文件
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显示 8 项.
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类别 |
日期 |
题名 |
作者 |
档案 |
| [電機工程研究所] 期刊論文 |
2002 |
Enhanced power performance of enhancement-mode Al0.5Ga0.5As/In0.15Ga0.85As pHEMTs using a low-k BCB passivation |
Chiu,HC; Hwu,MJ; Yang,SC; Chan,YJ |
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| [電機工程研究所] 期刊論文 |
2003 |
0.2-mu m gate-length InGaP-InGaAs DCFETs for C-band MMIC amplifier applications |
Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chan,YJ |
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| [電機工程研究所] 期刊論文 |
2004 |
K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology |
Chiu,HC; Yang,SC; Lin,CK; Hwu,MJ; Chiou,HK; Chan,YJ |
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| [電機工程研究所] 期刊論文 |
2003 |
High performance BCB-bridged AlGaAs/InGaAs power HFETs |
Chiu,HC; Yeh,TJ; Yang,SC; Hwu,MJ; Chan,YJ |
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| [電機工程研究所] 期刊論文 |
2003 |
A novel double-recessed 0.2-mu m T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabrication |
Hwu,MJ; Chiu,HC; Yang,SC; Chan,YJ |
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| [電機工程研究所] 期刊論文 |
2004 |
Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors |
Hwu,MJ; Chju,HC; Yang,SC; Chan,YJ; Chang,LB |
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| [電機工程研究所] 期刊論文 |
2004 |
Single step electron-beam lithography for asymmetric recess and gamma gate in high electron mobility transistor fabrication |
Lin,CK; Wang,WK; Hwu,MJ; Chan,YJ |
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| [電機工程研究所] 期刊論文 |
2003 |
Submicron RIE recessed InGaP/InGaAs doped-channel FETs |
Yang,SC; Chiu,HC; Hwu,MJ; Wang,WK; Lin,CK; Chan,YJ |
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