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    "Kao,CJ"的相关文件  

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    显示 15 项.

    类别 日期 题名 作者 档案
    [光電科學研究中心] 期刊論文 2002 Characterization of Si implants in p-type GaN Sheu,JK; Lee,ML; Tun,CJ; Kao,CJ; Yeh,LS; Chang,SJ; Chi,GC
    [物理研究所] 期刊論文 2005 Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN/GaN heterostructure field-effect transistors Kao,CJ; Chen,MC; Tun,CJ; Chi,GC; Sheu,JK; Lai,WC; Lee,ML; Ren,F; Pearton,SJ
    [物理研究所] 期刊論文 2005 Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition Kao,CJ; Kwon,YW; Heo,YW; Norton,DP; Pearton,SJ; Ren,F; Chi,GC
    [物理研究所] 期刊論文 2005 Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes Yang,HS; Han,SY; Heo,YW; Baik,KH; Norton,DP; Pearton,SJ; Ren,F; Osinsky,A; Dong,JW; Hertog,B; Dabiran,AM; Chow,PP; Chernyak,L; Steiner,T; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2005 Improved thermal stability CrB2 contacts on ZnO Ip,K; Khanna,R; Norton,DP; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2005 Thermal stability of W2B and W2B5 contacts on ZnO Ip,K; Khanna,R; Norton,DP; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2005 W2B-based ohmic contacts to n-GaN Khanna,R; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2005 W2B-based rectifying contacts to n-GaN Khanna,R; Pearton,SJ; Ren,F; Kravchenko,I; Kao,CJ; Chi,GC
    [物理研究所] 期刊論文 2004 Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N/GaN heterojunction field-effect transistors Kao,CJ; Sheu,JK; Lai,WC; Lee,ML; Chen,MC; Chi,GC
    [物理研究所] 期刊論文 2003 Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,SJ; Kao,CJ; Tun,CJ; Chen,MG; Chang,WH; Chi,GC; Tsai,JM
    [物理研究所] 期刊論文 2003 GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA
    [物理研究所] 期刊論文 2003 Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer Sheu,JK; Kao,CJ; Lee,ML; Lai,WC; Yeh,LS; Chi,GC; Chang,SJ; Su,YK; Tsa,JM
    [物理研究所] 期刊論文 2003 Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure Yeh,LS; Lee,ML; Sheu,JK; Chen,MG; Kao,CJ; Chi,GC; Chang,SJ; Su,YK
    [物理研究所] 期刊論文 2002 GaN p-n junction diode formed by Si ion implantation into p-GaN Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC
    [物理研究所] 期刊論文 2002 Planar GaN n(+)-p photodetectors formed by Si implantation into p-GaN Sheu,JK; Lee,ML; Yeh,LS; Kao,CJ; Tun,CJ; Chen,MG; Chi,GC; Chang,SJ; Su,YK; Lee,CT

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