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    Items for Author "Ren,F." 

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    Showing 7 items.

    Collection Date Title Authors Bitstream
    [光電科學研究中心] 期刊論文 2008 Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy Chen,J. Y.; Chi,G. C.; Huang,P. J.; Chen,M. Y.; Hung,S. C.; Nien,C. H.; Chen,M. C.; Lan,S. M.; Pong,B. J.; Pan,C. J.; Tun,C. J.; Ren,F.; Chang,C. Y.; Pearton,S. J.
    [光電科學研究中心] 期刊論文 2008 Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) Tsao,F. C.; Chen,J. Y.; Kuo,C. H.; Chi,G. C.; Pan,C. J.; Huang,P. J.; Tun,C. J.; Pong,B. J.; Hsueh,T. H.; Chang,C. Y.; Pearton,S. J.; Ren,F.
    [物理研究所] 期刊論文 2008 Detection of chloride ions using an integrated Ag/AgCl electrode with AlGaN/GaN high electron mobility transistors Hung,S. C.; Wang,Y. L.; Hicks,B.; Pearton,S. J.; Dennis,D. M.; Ren,F.; Johnson,J. W.; Rajagopal,P.; Roberts,J. C.; Piner,E. L.; Linthicum,K. J.; Chi,G. C.
    [物理研究所] 期刊論文 2008 GaN, ZnO and InN nanowires and devices Pearton,S. J.; Kang,B. S.; Gila,B. P.; Norton,D. P.; Kryliouk,O.; Ren,F.; He,Young-Woo; Chang,Chih-Yang; Chi,Gou-Chung; Wang,Wei-Ming; Chen,Li-Chyong
    [物理研究所] 期刊論文 2008 Integration of selective area anodized AgCl thin film with AlGaN/GaN HEMTs for chloride ion detection Hung,S. C.; Wang,Y. L.; Hicks,B.; Pearton,S. J.; Ren,F.; Johnson,J. W.; Rajagopal,P.; Roberts,J. C.; Piner,E. L.; Linthicum,K. J.; Chi,G. C.
    [物理研究所] 期刊論文 2008 Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition Hung,S. C.; Huang,P. J.; Chan,C. E.; Uen,W. Y.; Ren,F.; Pearton,S. J.; Yang,T. N.; Chiang,C. C.; Lan,S. M.; Chi,G. C.
    [物理研究所] 期刊論文 2007 Control of nucleation site density of GaN nanowires Chang,Chih-Yang; Pearton,S. J.; Huang,Ping-Jung; Chi,Gou-Chung; Wang,Hung-Ta; Chen,Jau-Juin; Ren,F.; Chen,Kuei-Hsien; Chen,Li-Chyong

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