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    近3年內發表的文件: 13(5.46%)
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    顯示項目151-175 / 238. (共10頁)
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    日期題名作者
    2003 Experimental study of perpendicular transport in weakly coupled AlxGa1-xN/GaN superlattices Waldron,EL; Li,YL; Schubert,EF; Graff,JW; Sheu,JK
    2003 Fabrication of optical transmission elements in an SiNx membrane Lee,CC; Chang,YC; Chang,JY; Chiu,CF; Chi,GC
    2003 High brightness InGaN green LEDs with an ITO on n(++)-SPS upper contact Chang,CS; Chang,SJ; Su,YK; Kuo,CH; Lai,WC; Lin,YC; Hsu,YP; Shei,SC; Tsai,JM; Lo,HM; Ke,JC; Shen,JK
    2003 Image-plane disk-type multiplex hologram Cheng,YS; Chen,CH
    2003 In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Hsu,YP; Kuo,CH; Lai,WC; Wen,TC; Tsai,JM; Sheu,JK
    2003 InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer Wu,LW; Chang,SJ; Su,YK; Tsai,TY; Wen,TC; Kuo,CH; Lai,WC; Sheu,JK; Tsai,JM; Chen,SC; Huang,BR
    2003 InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping Wen,TC; Chang,SJ; Su,YK; Wu,LW; Kuo,CH; Lai,WC; Sheu,JK; Tsai,TY
    2003 Nitride-based blue LEDs with GaN/SiN double buffer layers Kuo,CH; Chang,SJ; Su,YK; Wang,CK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Lin,CC
    2003 Nitride-based green light-emitting diodes with high temperature GaN barrier layers Wu,LW; Chang,SJ; Su,YK; Chuang,RW; Wen,TC; Kuo,CH; Lai,WC; Chang,CS; Tsai,JM; Sheu,JK
    2003 Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Chen,JF; Shen,JK; Tsai,JM
    2003 Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers Kuo,CH; Chang,SJ; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Tsai,JM; Chen,SC
    2003 n-UV plus blue/green/red white light emitting diode lamps Kuo,CH; Sheu,JK; Chang,SJ; Su,YK; Wu,LW; Tsai,JM; Liu,CH; Wu,RK
    2003 Photorefractive properties of two series of BaTiO3 crystals annealed in temperatures of 900 degrees C and 1000 degrees C Chang,JY; Huang,CY; Yueh,RR; Pan,HW; Lin,CH; Sun,CC
    2003 Properties of Cu/Au Schottky contacts on InGaP layer Liu,DS; Lee,CT; Wang,CW
    2003 Si and Zn co-doped InGaN-GaN white light-emitting diodes Chang,SJ; Wu,LW; Su,YK; Kuo,CH; Lai,WC; Hsu,YP; Sheu,JK; Chen,SF; Tsai,JM
    2003 White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors Sheu,JK; Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Lin,YC; Lai,WC; Tsai,JM; Chi,GC; Wu,RK
    2002-07-01 甲襞微循環之血球追蹤研究; The Investigation of Tracking Blood Cell in Nailfold Microcirculation System 游漢輝
    2002-07-01 光折變鈦酸鋇單晶之光譜及多波長光折變性質與氣氛處理關係之研究(II); Study on the Spectroscopy and Wavelength Dependence Photorefractive Properties of BaTiO/sub 3/ Crystal with after-Processing(II) 張正陽
    2002-07-01 高溫、高功率、高頻之氮化鋁鎵/氮化鎵PHEMT元件及高響應特性PIN; UV檢測器之研製 Fabrication of High-Temperature, High-Power, High-Speed AlGaN/GaN PHEMT and High Frequency Response AlGaN/GaN PIN UV Detectors 紀國鐘
    2002-07-01 氮化鎵藍紫光雷射二極體磊晶技術之研究(I); Epitaxial Growth of GaN Violet Laser Diode(I) 綦振瀛
    2002-07-01 新光折變材料開發及其應用技術之研究---子計畫III:高效率及新光折變材料開發之研究(II); A Study on the High Efficiency and New Photorefractive Materials(II) 張正陽
    2002-07-01 新光折變材料開發及其應用技術之研究---子計畫V:光折變晶體應用於高敏度光學空間與時域感測之研究(II); The Study of High-Sensitive Optical Sensing in Spatial and Temporal Domains with Use of Photorefractive Crystals(II) 孫慶成
    2002-07-01 新光折變材料開發及其應用技術之研究---總計畫:新光折變材料開發及其應用技術之研究(II); A Study on the New Photorefractive Material Growth and Applications Technique(II) 游漢輝; 陳志臣; 孫慶成; 鄭益祥; 張正陽; 藍崇文
    2002 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes Chang,SJ; Kuo,CH; Su,YK; Wu,LW; Sheu,JK; Wen,TC; Lai,WC; Chen,JF; Tsai,JM
    2002 Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN Chiou,JW; Mookerjee,S; Rao,KVR; Jan,JC; Tsai,HM; Asokan,K; Pong,WF; Chien,FZ; Tsai,MH; Chang,YK; Chen,YY; Lee,JF; Lee,CC; Chi,GC

    顯示項目151-175 / 238. (共10頁)
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