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    顯示項目201-225 / 249. (共10頁)
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    2001-10-01 新光折變材料開發及其應用技術之研究---總計畫(I); A Study on the New Photorefractive Material Growth and Applications Technique(I) 游漢輝; 藍崇文; 張正陽; 鄭益祥; 陳志臣; 孫慶成
    2001-07-01 光折變鈦酸鋇單晶之光譜及多波長光折變性質與氣氛處理關係之研究(I); Study on the Spectroscopy and Wavelength Dependence Photorefractive Properties of BaTiO/sub 3/ Crystal with After-Processing(I) 張正陽
    2001-07-01 氮化鎵藍光雷射二極體技術研究---子計畫一:氮化鎵系列材料磊晶技術之研究; Epitaxial Growth of GaN and Related Material 綦振瀛
    2001-07-01 氮化鎵藍光雷射二極體技術研究---子計畫二:氮化鎵系列材料P-N界面之形成及其物性與結構之研究; The Formation of p-n Junction and It's Properties to Structure Correction Study for GaN Mater 紀國鐘
    2001-07-01 氮化鎵藍光雷射二極體技術研究---總計畫; GaN-Based Blue Laser Diodes 綦振瀛
    2001-07-01 新光折變材料開發及其應用技術之研究---子計畫三:高效率及新光折變材料開發之研究(I); A Study on the High Efficiency and New Photorefractive Materials(I) 張正陽
    2001-07-01 觀察甲襞微循環之光電系統及其在臨床醫學應用之研究; The Clinical Applications and Investigation of Nailfold Microcirculation with an Electro-Optical System 游漢輝; 陳清淵; 李孝貽
    2001 Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs Lee,CC; Wu,LW; Chi,GC
    2001 Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition Wen,TC; Lee,WI; Sheu,JK; Chi,GC
    2001 Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices Sheu,JK; Kuo,CH; Chen,CC; Chi,GC; Jou,MJ
    2001 Enhanced output power in an InGaN-GaN multiquantum-well light-emitting diode with an InGaN current-spreading layer Sheu,JK; Chi,GC; Jou,MJ
    2001 FE calculation of contour integrals in plane anisotropic elastic media with crack surface tractions Chang,JH; Wu,WH
    2001 Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al0.15Ga0.85N/GaN superlattice Sheu,JK; Chi,GC; Jou,MJ
    2001 Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer Sheu,JK; Tsai,JM; Shei,SC; Lai,WC; Wen,TC; Kou,CH; Su,YK; Chang,SJ; Chi,GC
    2000-10-01 氮化鎵藍光雷射二極體技術研究---子計畫II:氮化鎵系列材料P-N界面之形成及其物性與結構之研究(II); The Formation of p-n Junction and It's Properties to Structure Correction Study for GaN Material(II) 紀國鐘
    2000-07-01 非線性光折變材料生長及其應用技術之研究---子計畫III:光折變塊晶製造及其特性研究(III); A Study on the Photorefractive Bulk Crystal Growth and Characterization(III) 張正陽
    2000-07-01 非線性光折變材料生長及其應用技術之研究---總計畫(III); A Study on the Nonlinear Photorefractive Material Growth and Applications Technique(III) 游漢輝; 鄭益祥; 孫慶成; 陳志臣; 藍崇文; 張正陽
    2000-07-01 氮化鎵藍光雷射二極體技術研究---子計畫I:氮化鎵系列材料磊晶技術之研究(II); Epitaxial Growth of GaN and Related Material(II) 綦振瀛
    2000-07-01 氮化鎵藍光雷射二極體技術研究---總計畫(II); GaN-Based Blue Laser Diodes(II) 綦振瀛
    2000-07-01 摻雜銠鈦酸鋇單晶之製造及其氣氛處理對其光折變性質影響之研究(II); A Study of Growth and Characterization of a Series of Reduced/Oxidized Rhodium-Doped BaTiO/sub 3/ (II) 張正陽
    2000-06-01 6328雷射反射鏡超低損耗量測技術開發與建立 李正中
    2000 Microstructural evolution in a multiple composite layer of GaN on sapphire by organometallic vapor phase epitaxy Yang,CC; Wu,MC; Lee,CH; Chi,GC
    2000 Optical properties in InGaN/GaN multiple quantum wells and blue LEDs Su,YK; Chi,GC; Sheu,JK
    2000 The doping process of p-type GaN films Chi,GC; Kuo,CH; Sheu,JK; Pan,CJ
    1999-10-01 參加第九屆加拿大半導體技術研討會 李清庭

    顯示項目201-225 / 249. (共10頁)
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