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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32033


    Title: Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs
    Authors: Hsueh,Kuang-Po;Hsin,Yue-Ming;Sheu,Jinn-Kong;Lai,Wei-Chih;Tun,Chun-Ju;Hsu,Chia-Hung;Lin,Bi-Hsuan
    Contributors: 電機工程研究所
    Keywords: HETEROJUNCTION BIPOLAR-TRANSISTORS;CHEMICAL-VAPOR-DEPOSITION;P-INGAN;GAN;EMITTER;BASE;TEMPERATURE;LAYER
    Date: 2007
    Issue Date: 2010-07-06 18:17:00 (UTC+8)
    Publisher: 中央大學
    Abstract: This work investigates the effect of non-ideal material and contact conditions on the characterization of Al0.17Ga0.83N/GaN heterojunction bipolar transistors (HBTs) by comparing numerical simulations with measured device characteristics. Al0.17Ga0.83N/Ga
    Relation: SOLID-STATE ELECTRONICS
    Appears in Collections:[電機工程研究所] 期刊論文

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