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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32066


    Title: Light output improvement of InGaN ultraviolet light-emitting diodes by using wet-etched stripe-patterned sapphire substrates
    Authors: Pan,Chang-Chi;Hsieh,Chi-Hsun;Lin,Chih-Wei;Chyi,Jen-Inn
    Contributors: 電機工程研究所
    Keywords: VAPOR-PHASE EPITAXY;EXTERNAL-QUANTUM EFFICIENCY;LATERAL OVERGROWTH;GAN;GROWTH;POWER;BLUE
    Date: 2007
    Issue Date: 2010-07-06 18:17:50 (UTC+8)
    Publisher: 中央大學
    Abstract: GaN-based epilayers are grown on wet-etched stripe-patterned sapphire substrates, with stripes along the < 11-20 >(sapphire) and < 1-100 >(sapphire) directions, for 400 nm ultraviolet light-emitting diodes (LEDs). The effects of the etching depth and stri
    Relation: JOURNAL OF APPLIED PHYSICS
    Appears in Collections:[電機工程研究所] 期刊論文

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