Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength

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題名:	Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength
作者:	Shi,Jin-Wei;Li,Yu-Tai;Pan,Ci-Ling;Lin,M. L.;Wu,Y. S.;Liu,W. S.;Chyi,J. -I.
貢獻者:	電機工程研究所
關鍵詞:	PERFORMANCE;POWER
日期:	2006
上傳時間:	2010-07-06 18:20:05 (UTC+8)
出版者:	中央大學
摘要:	In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. Accord
關聯:	APPLIED PHYSICS LETTERS
顯示於類別:	[電機工程研究所] 期刊論文

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