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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32362


    Title: Transient pulsed analysis on GaNHEMTs at cryogenic temperatures
    Authors: Lin,CH;Wang,WK;Lin,PC;Lin,CK;Chang,YJ;Chan,YJ
    Contributors: 電機工程研究所
    Keywords: IMPACT IONIZATION;INALAS/INGAAS HEMTS
    Date: 2005
    Issue Date: 2010-07-06 18:25:08 (UTC+8)
    Publisher: 中央大學
    Abstract: A pulsed measurement of AlGaN/GaN high electron mobility transistors (HEMTs) current-voltage (I-V) output characteristics from 100 to 300 K temperatures has been systematically investigated, and a significant kink is clearly observed, which is more severe
    Relation: IEEE ELECTRON DEVICE LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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