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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/72648

    Title: 1T1R憶阻器記憶體的 邊界電流識別和可靠性增強技術;Boundary Current Identification and Reliability-Enhancement Techniques for 1T1R Memristor Memories
    Authors: 林姿穎;LIN, TZU-TING
    Contributors: 電機工程學系
    Keywords: 憶阻器;記憶體;memristor;memory
    Date: 2016-12-22
    Issue Date: 2017-01-23 17:09:53 (UTC+8)
    Publisher: 國立中央大學
    Abstract: 憶阻器被認為是用來替代未來非揮發性記憶體的一種非揮發性裝置。對於憶阻器記憶體而言,需要有參考電流來區分高阻抗和低阻抗。因此參考電流對於憶阻器的良率和可靠度有很大的衝擊,所以參考電流的設置是非常重要的。如果我們可以找到高阻抗跟低阻抗的邊界電流,我們就可以設置更佳的參考電流。因此,我們需要有可找到邊界電流的有效方法。

    Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF ) state from the low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. If we can identify the boundary currents of ROFF and RON, a good reference current can be set. Therefore, effective methods for identifying the boundary currents of memristor memories are needed.
    In this thesis, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states of 1T1R memristor memories. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if the test method is used to identify the boundary currents, 10% memristor cells which may be read incorrectly due to process variation for ROFF/RON
    =3 can be eliminated. On the other hand, the ROFF/RON resistance ratio will decrease with the increasing of the read/write cycles in use. This results in the reliability issue. To cope with this issue, we propose a online monitoring and tuning(OMT) technique for the 1T1R memristor memories. The OMT technique can effectively prolong the read/write cycles of the memristor memories. Simulation results show that if the OMT technique can extend the lifetime of the memristor memory from 105 to 106 access cycles.
    Appears in Collections:[電機工程研究所] 博碩士論文

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