矽基二硫化鉬薄膜之製程與特性研究;Research on the Fabrication Process and Properties of Silicon-based Molybdenum Disulfide Thin Film

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/92377

Title:	矽基二硫化鉬薄膜之製程與特性研究;Research on the Fabrication Process and Properties of Silicon-based Molybdenum Disulfide Thin Film
Authors:	邱聖儒;Chiu, Sheng-Ru
Contributors:	光電科學與工程學系
Keywords:	二硫化鉬;Molybdenum Disulfide
Date:	2023-08-01
Issue Date:	2023-10-04 15:50:37 (UTC+8)
Publisher:	國立中央大學
Abstract:	二維材料二硫化鉬（MoS2）因其獨特的結構和特性，在下一代半導體材料中引起了廣泛的關注。本研究旨在開發一種直接在矽基SiO2薄膜生長二維MoS2薄膜的方法，減少轉印所造成的完整性，對準及雜質的影響，簡化製程的程序，並探索其作為半導體材料的潛力。本研究使用低壓化學氣相沉積法(LPCVD)方式，於SiO2薄膜上直接生長MoS2薄膜，而SiO2用氧電漿預先處理，除了能有效去除SiO2表面的污染物，如塵埃、有機殘留物、水分等，還可以活化SiO2表面，增加其表面能，提高表面的反應性。這可以改善SiO2與其他材料之間的黏附力和界面特性，對於塗覆、薄膜沉積、電子束蒸鍍等工藝具有重要影響，有助於後續生長MoS2薄膜。而生長出的樣品所量測到拉曼位移之△k為21cm-1以下的單層結構，PL量測得出MoS2為直接能隙的特性，AFM量測為0.712nm的單層厚度，HR-TEM量測層間距為0.638nm。該研究證明出以氧電漿處理過後的基板所生長的MoS2薄膜，可達到與在Sapphire上生長及轉印到SiO2基板上的MoS2薄膜有相同品質、均勻性良好及單層結構的結果，未來可以更廣泛的應用於電子及光電元件。 ;The two-dimensional 2D material molybdenum disulfide (MoS2) has attracted much attention as a next-generation semiconductor material due to its unique structure and properties. The aim of this study is to deposit two-dimensional MoS2 films directly on Si-based SiO2 films by simplify the process procedures to reduce the effects of influences, alignment and defects caused by transfer printing, and to explore its potential as the next-generation semiconductor material. In this study, MoS2 films were grown directly on SiO2 films using low pressure chemical vapor deposition (LPCVD). The SiO2 films were pretreated with oxygen plasma to remove contaminants on the SiO2 surface, such as dust, organic residues, and moisture, etc. And activate the SiO2 surface, increase its surface energy, and improve the reactivity of the surface can be improved. The adhesion and interfacial properties between SiO2 and 2D materials to improve the growth of MoS2 films. The Raman shift Δk of the MoS2 samples were 21 cm-1 or less to be confirmed as the monolayer structure. The PL measurement showed that the MoS2 films were direct energy gap. The thickness of the MoS2 monolayer was 0.712 nm measured by AFM. The spacing between the layers was measured to be 0.638 nm measured by HR-TEM. This study demonstrated that MoS2 films grown on oxygen plasma-treated substrates can achieve the same quality, good uniformity, and monolayer structure as MoS2 films grown on Sapphire. The results show the MoS2 films can be used for a wider range of electronic and optoelectronic applications in the future.
Appears in Collections:	[Graduate Institute of Optics and Photonics] Electronic Thesis & Dissertation

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