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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/9732

    Title: 應用於單電子電晶體之矽/鍺量子點研製;Study of Forming Si/Ge Quantum dots for Single-Electron Devices
    Authors: 林上偉;Shang-Wei Lin
    Contributors: 電機工程研究所
    Keywords: 小線寬間隙壁自我對準技術;庫倫震盪效應;庫倫阻斷效應;矽鍺;量子點;單電子電晶體;Single-Electron Transistor(SET);Quantum dot;Coulomb blockade Effect;Narrow spacer self-alignment(NSSA));Coulomb Oscillation Effcet
    Date: 2004-07-09
    Issue Date: 2009-09-22 11:54:44 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本論文之研究重點,在於發展可應用於矽基材單電子電晶體之量子點(線)的研製。有鑑於其他相關研究單位所發展的量子點製程,大都未考量製程中的穩定性、再現性、成本考量以及與現今半導體製程的相容性;故本論文將重點放在可相容於目前傳統的LSI製程,以及盡量提高製程的穩定性與再現性,並且降低製程的成本,發展出數種在傳統矽基材下可行的量子點(線)製作方式。 In this thesis, the technique of forming Si & Ge quantum dots for Single-electron devices will be proposed. The advantages of the technique are well controllable, reproducible and compatible with traditional CMOS process.
    Appears in Collections:[電機工程研究所] 博碩士論文

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