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Showing items 376-400 of 951. (39 Page(s) Totally)
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Date
Title
Authors
2005
Aircraft type recognition in satellite images
Hsieh,JW
;
Chen,JM
;
Chuang,CH
;
Fan,KC
2005
64-bit high-performance power-aware conditional carry adder design
Cheng,KH
;
Cheng,SW
2004
Function approximation via particular input space partition and region-based exponential membership functions
Teng,YW
;
Wang,WJ
;
Chiu,CH
2004
Further improvements in equivalent-circuit model with levelized incomplete LU factorization for mixed-level semiconductor device and circuit simulation
Dai,JF
;
Chang,CC
;
Li,SJ
;
Tsai,YT
2004
Fuzzy controller design for discrete controllability canonical Takagi-Sugeno fuzzy systems
Chang,WJ
;
Sun,CC
;
Chung,HY
2004
GalGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
LaRoche,JR
;
Luo,B
;
Ren,F
;
Baik,KH
;
Stodilka,D
;
Gila,B
;
Abernathy,CR
;
Pearton,SJ
;
Usikov,A
;
Tsvetkov,D
;
Soukhoveev,V
;
Gainer,G
;
Rechnikov,A
;
Dimitriev,V
;
Chen,GT
;
Pan,CC
;
Chyi,JI
2004
High linearity InGaP/GaAs power HBTs by collector design
Wang,CM
;
Hsu,HT
;
Shu,HC
;
Hsin,YM
2004
High-reflectivity Pd/Ni/Al/Ti/Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes
Chen,GT
;
Pan,CC
;
Fang,CS
;
Huang,TC
;
Chyi,JI
;
Chang,MN
;
Huang,SB
;
Hsu,JT
2004
Impact of ionospheric scintillations on LEO satellite DS-CDMA communication system
Li,SY
;
Liu,CH
2004
Improved CMOS microwave linearity based on the modified large-signal BSIM model
Lai,HH
;
Hsiao,CC
;
Kuo,CW
;
Chan,YJ
;
Sato,T
2004
Improved gate leakage and microwave power performance by inserting a thin praseodymium gate metal layer in AlGaAs/InGaAs doped-channel field effect transistors
Hwu,MJ
;
Chju,HC
;
Yang,SC
;
Chan,YJ
;
Chang,LB
2004
InGaN-GaN MQW LEDs with current blocking layer formed by selective activation.
Lee,CM
;
Chuo,CC
;
Liu,YC
;
Chen,IL
;
Chyi,JI
2004
K-band monolithic InGaP-InGaAs DCFET amplifier using BCB coplanar waveguide technology
Chiu,HC
;
Yang,SC
;
Lin,CK
;
Hwu,MJ
;
Chiou,HK
;
Chan,YJ
2004
Low damage, Cl-2-based gate recess etching for 0.3-mu m gate-length AlGaN/GaN HEMT fabrication
Wang,WK
;
Li,YJ
;
Lin,CK
;
Chan,YJ
;
Chen,GT
;
Chyi,JI
2004
Low power and cost effective VLSI design for an MP3 audio decoder using an optimised synthesis-subband approach
Tsai,TH
;
Yang,YC
2004
Low-k BCB passivation on AlGaN-GaN HEMT fabrication
Wang,WK
;
Lin,CH
;
Lin,PC
;
Lin,CK
;
Huang,FH
;
Chan,YJ
;
Chen,GT
;
Chyi,JI
2004
Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes
Pan,CC
;
Lee,CM
;
Liu,JW
;
Chen,GT
;
Chyi,JI
2004
MEXTRAM modeling of Si-SiGeHPTs
Yuan,F
;
Shi,JW
;
Pei,ZW
;
Liu,CW
2004
MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors
Irokawa,Y
;
Nakano,Y
;
Ishiko,M
;
Kachi,T
;
Kim,J
;
Ren,F
;
Gila,BP
;
Onstine,AH
;
Abernathy,CR
;
Pearton,SJ
;
Pan,CC
;
Chen,GT
;
Chyi,JI
2004
Modeling the effects of ionospheric scintillations on LEO satellite communications
Li,SY
;
Liu,CH
2004
Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
Cheng,YC
;
Lin,EC
;
Wu,CM
;
Yang,CC
;
Yang,JR
;
Rosenauer,A
;
Ma,KJ
;
Shi,SC
;
Chen,LC
;
Pan,CC
;
Chyi,JI
2004
Neuro-sliding mode control with its applications to seesaw systems
Tsai,CH
;
Chung,HY
;
Yu,FM
2004
Nonlinear behaviors of low-temperature-grown GaAs-based photodetectors around 1.3 mu m telecommunication wavelength
Shi,JW
;
Chen,YH
;
Gan,KG
;
Chiu,YJ
;
Bowers,JE
;
Tien,MC
;
Liu,TM
;
Sun,CK
2004
Novel structure of an arrayed-waveguide grating multiplexer with flat spectral response
Lee,TH
;
Tu,KH
;
Lee,CT
2004
On the origin of spin loss in GaMnN/InGaN light-emitting diodes
Buyanova,IA
;
Izadifard,M
;
Chen,WM
;
Kim,J
;
Ren,F
;
Thaler,G
;
Abernathy,CR
;
Pearton,SJ
;
Pan,CC
;
Chen,GT
;
Chyi,JI
;
Zavada,JM
Showing items 376-400 of 951. (39 Page(s) Totally)
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