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Wide-stopband microstrip bandpass f...
Vertical-cavity surface-emitting la...
Thermal stability improvement by us...
The improvement of GaN p-i-n UV sen...
Study of tunneling currents through...
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显示项目251-275 / 951. (共39页)
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日期
题名
作者
2006
Frequency tunability of terahertz photonic transmitters
Kao,TF
;
Chang,HH
;
Chen,LJ
;
Lu,JY
;
Liu,AS
;
Yu,YC
;
Wu,RB
;
Liu,WS
;
Chyi,JI
;
Sun,CK
2006
Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy
Kuo,SY
;
Kei,CC
;
Hsiao,CN
;
Chao,CK
2006
Photoexcitation effects on charge transports of Ge quantum-dot resonant tunneling diodes
Li,P. W.
;
Kuo,David M. T.
;
Hsu,Y. C.
2006
Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition
Hsieh,TP
;
Chang,HS
;
Chen,WY
;
Chang,WH
;
Hsu,TM
;
Yeh,NT
;
Ho,WJ
;
Chiu,PC
;
Chyi,JI
2006
Improving the compression and encryption of images using FPGA-based cryptosystems
Ou,SC
;
Chung,HY
;
Sung,WT
2006
Leaky-wave photodiodes with a partially p-doped absorption layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance
Chiu,WY
;
Shi,JW
;
Wang,WK
;
Wu,YS
;
Chan,YJ
;
Huang,YL
;
Xuan,R
2006
Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer
Hsueh,KP
;
Hsin,YM
;
Sheu,JK
2006
Quasi-constant-sensitivity VCO with offset-tuning PN junction varactor array
Lee SH,?Chiang YT,?Chiou HK
2006
Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications
Shi,JW
;
Huang,HY
;
Shell,JK
;
Hsieh,SH
;
Wu,YS
;
Lu,JY
;
Huang,FH
;
Lai,WC
2006
Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs
Liao,YS
;
Shi,JW
;
Wu,YS
;
Kuo,HC
;
Feng,M
;
Lin,GR
2006
Pinholelike defects in multistack 1.3 mu m InAs quantum dot laser
Liu,WS
;
Chang,HL
;
Liu,YS
;
Chyi,JI
2006
RF power characteristics of SiGeHBTs at cryogenic temperatures
Hsieh,Meng-Wei
;
Hsin,Yue-Ming
;
Liang,Kung-Hao
;
Chan,Yi-Jen
;
Tang,Denny
2006
Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs
Tang,WB
;
Hsin,YM
2006
Robustness analysis of discrete time-delay systems
Huang,CP
;
Juang,YT
2006
Robust integration for speech features
Huang,Kuo-Chang
;
Juang,Yau-Tarng
;
Chang,Wen-Chieh
2006
Room-temperature transient carrier transport in germanium single-hole/electron transistors
Liao,WM
;
Li,PW
;
Kuo,DMT
;
Lai,WT
2006
Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance
Shi,JW
;
Chiu,PH
;
Huang,FH
;
Wu,YS
;
Lu,JY
;
Sun,CK
;
Liu,CW
;
Chen,PS
2006
Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications
Jang,S
;
Ren,F
;
Pearton,SJ
;
Gila,BP
;
Hlad,M
;
Abernathy,CR
;
Yang,H
;
Pan,CJ
;
Chyi,JI
;
Bove,P
;
Lahreche,H
;
Thuret,J
2006
Simulation of Si n-MOS inversion layer with Schrodinger-Poisson equivalent circuit model
Li,SJ
;
Chang,CC
;
Tsai,YT
2006
Sliding mode control for unmatched uncertain systems with totally invariant property and exponential stability
Tsai,YW
;
Mai,KH
;
Shyu,KK
2006
Study of carrier transport by pentacene thin-film transistors at high temperatures
Lo,PY
;
Pei,ZW
;
Hwang,JJ
;
Tseng,HY
;
Chan,YJ
2006
Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors
Li,PW
;
Kuo,DMT
;
Liao,WM
;
Lai,WT
2006
The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure
Liu,SS
;
Li,PW
;
Lan,WH
;
Cheng,YC
2006
Thermal stability improvement by using Pd/NiO/Al/Ti/Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes
Pan,CC
;
Chen,GT
;
Hsu,WJ
;
Lin,CW
;
Chyi,JI
2006
Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures
Shi,JW
;
Yen,JL
;
Jiang,CH
;
Chen,KM
;
Hung,TJ
;
Yang,YJ
显示项目251-275 / 951. (共39页)
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