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类别	日期	题名	作者
[電機工程研究所] 期刊論文	2008	Enhanced 400-600 nm photoresponsivity of metal-oxide-semiconductor diodes with multi-stack germanium quantum dots	Tzeng,S. S.; Li,P. W.
[電機工程研究所] 期刊論文	2008	Photoresponses in polycrystalline silicon phototransistors incorporating germanium quantum dots in the gate dielectrics	Tseng,S. S.; Chen,I. H.; Li,P. W.
[電機工程研究所] 期刊論文	2007	Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12	Wu,J. H.; Li,P. W.
[電機工程研究所] 期刊論文	2007	Growth kinetics and related physical/electrical properties of Ge quantum dots formed by thermal oxidation of Si1-xGex-on-insulator	Lai,W. T.; Li,P. W.
[電機工程研究所] 期刊論文	2007	Room-temperature observation of current bistability and fine structures in germanium quantum dots/SiO2 resonant tunneling diodes	Hsu,Y. C.; Lai,W. T.; Li,P. W.; Kuo,David M. T.
[電機工程研究所] 期刊論文	2006	Photoexcitation effects on charge transports of Ge quantum-dot resonant tunneling diodes	Li,P. W.; Kuo,David M. T.; Hsu,Y. C.
[機械工程研究所] 期刊論文	2007	Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer	Lee,T. -H.; Huang,C. -H.; Yang,Y. Y.; Suryasindhu,T.; Li,P. W.