English  |  正體中文  |  简体中文  |  Items with full text/Total items : 69561/69561 (100%)
Visitors : 23718598      Online Users : 644
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version


    Loading community tree, please wait....


    Loading year class tree, please wait....

    Items for Author "Hsin,Yue-Ming" 

    Return to Browse by Author

    Showing 14 items.

    Collection Date Title Authors Bitstream
    [化學工程與材料工程研究所] 期刊論文 2007 Flip-chip assembled GaAs pHEMT Ka-band oscillator Huang,Wei-Kuo; Liu,Yu-An; Wang,Che-Ming; Hsin,Yue-Ming; Liu,Cheng-Yi; Yeh,Tsung-Jung
    [電機工程研究所] 期刊論文 2008 An InP/InGaAs/InP DHBT with high power density at Ka-band Wang,Che-Ming; Huang,Shou-Chien; Huang,Wei-Kuo; Hsin,Yue-Ming
    [電機工程研究所] 期刊論文 2008 Improved SiGe power HBT characteristics by emitter layout Huang,Shou-Chien; Chang,Chia-Tsung; Pan,Chun-Ting; Hsin,Yue-Ming
    [電機工程研究所] 期刊論文 2007 A high-speed and high-responsivity photodiode in standard CMOS technology Huang,Wei-Kuo; Liu,Yu-Chang; Hsin,Yue-Ming
    [電機工程研究所] 期刊論文 2007 Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs Hsueh,Kuang-Po; Hsin,Yue-Ming; Sheu,Jinn-Kong; Lai,Wei-Chih; Tun,Chun-Ju; Hsu,Chia-Hung; Lin,Bi-Hsuan
    [電機工程研究所] 期刊論文 2007 Enhanced f(T) and linearity performance of InGaP/GaAs HBTs using a non-uniform doping collector Wang,Che-ming; Hsin,Yue-ming
    [電機工程研究所] 期刊論文 2007 Low-frequency noise properties of SiGe heterojunction bipolar transistors Hsieh,Meng-Wei; Hsin,Yue-Ming; Chan,Yi-Jen; Tang,Denny
    [電機工程研究所] 期刊論文 2007 Simulation study of a novel collector-up npn InGaP/GaAs heterojunction bipolar transistor with a p-type doping buried layer for current confinement Hsu,Hung-Tsao; Hsin,Yue-Ming
    [電機工程研究所] 期刊論文 2007 Temperature dependent study of InAlAs-InP/GaAsSb/InP double heterojunction bipolar transistors Wang,Che-ming; Hsin,Yue-Ming
    [電機工程研究所] 期刊論文 2007 Temperature-dependent study of n-ZnO/p-GaN diodes Hsueh,Kuang-Po; Huang,Shou-Chien; Li,Ching-Tai; Hsin,Yue-Ming; Sheu,Jinn-Kong; Lai,Wei-Chih; Tun,Chun-Ju
    [電機工程研究所] 期刊論文 2006 A collector-up heterojunction bipolar transistor using a p-type doping buried layer Hsu,Hung-tsao; Hsin,Yue-ming
    [電機工程研究所] 期刊論文 2006 A new extraction technique for the complete small-signal equivalent-circuit model of InGaP/GaAs HBT including base contact impedance and AC current crowding effect Tang,Wen-Bin; Wang,Che-Ming; Hsin,Yue-Ming
    [電機工程研究所] 期刊論文 2006 Investigation of Cr- and Al-based metals for the reflector and Ohmic contact on n-GaN in GaN flip-chip light-emitting diodes Hsueh,Kuang-Po; Chiang,Kuo-Chun; Hsin,Yue-Ming; Wang,Charles J.
    [電機工程研究所] 期刊論文 2006 RF power characteristics of SiGeHBTs at cryogenic temperatures Hsieh,Meng-Wei; Hsin,Yue-Ming; Liang,Kung-Hao; Chan,Yi-Jen; Tang,Denny

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明