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    显示项目16151-16160 / 81569. (共8157页)
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    日期题名作者
    2008 Improvement of electrochemical microdrilling accuracy using helical tool Tsui,Hai-Ping; Hung,Jung-Chou; You,Jyun-Cin; Yan,Biing-Hwa
    1999 The improvement of GaN epitaxial layer quality by the design of reactor chamber spacing Yang,CC; Chi,GC; Huang,CK; Wu,MC
    1999 Improvement of GaN layer quality by using the bulk-GaN buffer structure grown by metalorganic chemical vapor deposition Yang,CC; Wu,MC; Chi,GC
    2006 The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure Liu,SS; Li,PW; Lan,WH; Cheng,YC
    2004 Improvement of GPS/MET ionospheric profiling and validation using the Chung-Li ionosonde measurements and the IRI model Tsai,LC; Tsai,WH
    2003 Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Tu,RC; Tun,CJ; Shen,JK; Kuo,WH; Wang,TC; Tsai,CE; Hsu,JT; Chi,J; Chi,GC
    2013-08-29 Improvement of Kernel Dependency Estimation and Case Study on Skewed Data 陳慶治; Chen,Qingzhi
    2020-01-14 Improvement of Magnesium Cation-Chloride and Acetate Anion Interaction Lennard-Jones Parameters by Experimental Osmotic Pressure: Difficulty Arises from Slow Water Exchange Rate 高立昇; Sheng, Kao-Li
    2005 Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector Chiu,WY; Huang,FH; Wu,YS; Lin,DM; Chan,YJ; Chen,SH; Chyi,JI; Shi,JW
    2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG
    显示项目16151-16160 / 81569. (共8157页)
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