跳至: [中文]   [數字0-9]   [ A B C D E F G H I J K L M N O P Q R S T U V W X Y Z ] 請輸入前幾個字:

顯示項目15011-15020 / 81569. (共8157頁) << < 1497 1498 1499 1500 1501 1502 1503 1504 1505 1506 > >> 每頁顯示[10|25|50]項目

日期	題名	作者
2003	GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts	Chang,SJ; Lee,ML; Sheu,JK; Lai,WC; Su,YK; Chang,CS; Kao,CJ; Chi,GC; Tsai,JA
2001	GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts	Chen,CH; Chang,SJ; Su,YK; Chi,GC; Chi,JY; Chang,CA; Sheu,JK; Chen,JF
2003	GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method	Lee,CT; Lee,HY; Chen,HW
2002	GaN p-n junction diode formed by Si ion implantation into p-GaN	Lee,ML; Sheu,JK; Yeh,LS; Tsai,MS; Kao,CJ; Tun,CJ; Chang,SJ; Chi,GC
2010	GaN Schottky Barrier Photodetectors	Chang,SJ; Wang,SM; Chang,PC; Kuo,CH; Young,SJ; Chen,TP; Wu,SL; Huang,BR
2008	GaN, ZnO and InN nanowires and devices	Pearton,S. J.; Kang,B. S.; Gila,B. P.; Norton,D. P.; Kryliouk,O.; Ren,F.; He,Young-Woo; Chang,Chih-Yang; Chi,Gou-Chung; Wang,Wei-Ming; Chen,Li-Chyong
2007	GaN-based Indium-tin-oxide light emitting diodes with nanostructured silicon upper contacts	Kuo,C. H.; Chang,S. J.; Kuan,H.
2010	GaN-Based LEDs With AZO:Y Upper Contact	Chen,PH; Lai,WC; Peng,LC; Kuo,CH; Yeh,CL; Sheu,JK; Tun,CJ
2009	GaN-Based LEDs With Mesh ITO p-Contact and Nanopillars	Lai,WC; Chen,PH; Chang,LC; Kuo,CH; Sheu,JK; Tun,CJ; Shei,SC
2009	GaN-Based Light-Emitting Diode Prepared on Nano-Inverted Pyramid GaN Template	Kuo,CW; Chang,LC; Kuo,CH

顯示項目15011-15020 / 81569. (共8157頁) << < 1497 1498 1499 1500 1501 1502 1503 1504 1505 1506 > >> 每頁顯示[10|25|50]項目