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    顯示項目876-900 / 1019. (共41頁)
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    日期題名作者
    2003 GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method Lee,CT; Lee,HY; Chen,HW
    2003 Image-plane conical multiplex holography by one-step recording Cheng,YS; Lai,CM
    2003 Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Tu,RC; Tun,CJ; Shen,JK; Kuo,WH; Wang,TC; Tsai,CE; Hsu,JT; Chi,J; Chi,GC
    2003 Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers Tu,RC; Chuo,CC; Pan,SM; Fan,YM; Tsai,CE; Wang,TC; Tun,CJ; Chi,GC; Lee,BC; Lee,CP
    2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG
    2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC
    2003 Increasing the conductivity of photorefractive BaTiO3 single crystals by doping Ru Lin,CH; Huang,CY; Chang,JY
    2003 Investigation of accumulated carrier mechanism on sulfurated GaN layers Lin,YJ; Lee,CS; Lee,CT
    2003 Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN Lin,YJ; Li,ZD; Hsu,CW; Chien,FT; Lee,CT; Shao,ST; Chang,HC
    2003 Investigation of degradation mechanism of Schottky diodes Lee,HY; Lee,CT
    2003 Light modulation based on active-vibration-controlled beam fanning in BaTiO3 Ouyang,Y; Sun,CC; Hsu,CY; Yau,HF
    2003 Low alkaline contamination bottom antireflective coatings for both 193-and 157-nm lithography applications Chen,HL; Chuang,YF; Lee,CC; Hsieh,CI; Ko,FH; Wang,LA
    2003 Low-temperature Raman study of zinc-doped lithium niobate crystal powders Hu,ML; Chia,CT; Chang,JY; Tse,WS; Yu,JT
    2003 Measuring the thickness of opaque plane-parallel parts using an external cavity diode laser and a double-ended interferometer Lu,SH; Chiueh,CI; Lee,CC
    2003 Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air Lee,CT; Lin,YJ; Lee,TH
    2003 Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN Lee,CT; Chen,HW; Lee,HY
    2003 Metal-semiconductor-metal photodetectors with InAlGaP capping and buffer layers Lee,CT; Lee,HY
    2003 Micropolarizer fabricated from CaCO3 by anisotropic wet etching Chang,YC; Tien,HT; Sung,CD; Lee,CC; Wang,CM; Chang,JY
    2003 Multilayer storage in a shift-multiplexed holographic disk Su,WC; Chen,YW; Sun,CC; Ouyang,Y
    2003 Multiplexed edge-lit holograms Su,WC; Sun,CC; Kukhtarev,N
    2003 Optical identification using a random phase mask Su,WC; Chen,YW; Ouyang,Y; Sun,CC; Wang,B
    2003 Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode Yu,QX; Xu,B; Wu,QH; Liao,Y; Wang,GZ; Fang,RC; Lee,HY; Lee,CT
    2003 Poincare cycle of a multibox Ehrenfest urn model with directed transport Kao,YM; Luan,PG
    2003 Polarization switching of pure and MgO-doped lithium niobate crystals Hu,ML; Hu,LJ; Chang,JY
    2003 Polarization-multiplexed volume holograms in LiNbO3 with 90-deg geometry Su,WC; Sun,CC; Kukhtarev,N; Chiou,AET

    顯示項目876-900 / 1019. (共41頁)
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