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    日期題名作者
    2003 An estimation of shallow energy level location in BaTiO3 Donn,SC; Chen,MT; Chung,BT; Chang,JY
    2003 Analysis of CCD moire pattern for micro-range measurements using the wavelet transform Chang,RS; Sheu,JY; Lin,CH; Liu,HC
    2003 Boundary and particle number effects on the thermodynamic properties of trapped ideal Bose gases Kao,YM; Lin,DH; Han,P; Luan,PG
    2003 Determination of the optical constants of an arbitrarily oriented anisotropic thin film by exciting surface plasmons analyzed by the nonsymmetric theory Jen,YJ; Lee,CC
    2003 Effect of the readout wavefront curvature on the correlation peak intensity joint-transform correlators with a thick recording medium Cheng,YS; Chen,HC
    2003 Effects of ion energy on internal stress and optical properties of ion-beam sputtering Ta2O5 films Tien,CL; Lee,CC
    2003 Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry Ting,YS; Chen,CC; Sheu,JK; Chi,GC; Hsu,JT
    2003 Fabrication of high-aspect-ratio sub-diffraction-limit microstructures by two-photon-absorption photopolymerization Pan,EY; Pu,NW; Tong,YP; Yau,HF
    2003 Fabry-Perot structures for attenuated phase-shifting mask application in ArF and F-2 lithography Chen,HL; Wu,HS; Lee,CC; Ko,FH; Fan,W; Hsieh,CI
    2003 Fabry-Perot type antireflective coatings for binary mask applications in ArF and F-2 excimer laser lithographies Chen,HL; Lee,CC; Chuang,YF; Liu,MC; Hsieh,CI; Ko,FH
    2003 Gallium nitride diffractive microlenses using in ultraviolet micro-optics system Hou,CH; Li,MH; Chen,CC; Chang,JY; Sheu,JK; Chi,GC; Wu,C; Cheng,WT; Yeh,JH
    2003 GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method Lee,CT; Lee,HY; Chen,HW
    2003 Image-plane conical multiplex holography by one-step recording Cheng,YS; Lai,CM
    2003 Improvement of InGaN/GaN laser diodes by using a Si-doped In0.23Ga0.77N/GaN short-period superlattice tunneling contact layer Tu,RC; Tun,CJ; Shen,JK; Kuo,WH; Wang,TC; Tsai,CE; Hsu,JT; Chi,J; Chi,GC
    2003 Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers Tu,RC; Chuo,CC; Pan,SM; Fan,YM; Tsai,CE; Wang,TC; Tun,CJ; Chi,GC; Lee,BC; Lee,CP
    2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers Tu,RC; Tun,CJ; Pan,SM; Liu,HP; Tsai,CE; Sheu,JK; Chuo,CC; Wang,TC; Chi,GC; Chen,IG
    2003 Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature Tu,RC; Tun,CJ; Pan,SM; Chuo,CC; Sheu,JK; Tsai,CE; Wang,TC; Chi,GC
    2003 Increasing the conductivity of photorefractive BaTiO3 single crystals by doping Ru Lin,CH; Huang,CY; Chang,JY
    2003 Investigation of accumulated carrier mechanism on sulfurated GaN layers Lin,YJ; Lee,CS; Lee,CT
    2003 Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN Lin,YJ; Li,ZD; Hsu,CW; Chien,FT; Lee,CT; Shao,ST; Chang,HC
    2003 Investigation of degradation mechanism of Schottky diodes Lee,HY; Lee,CT
    2003 Light modulation based on active-vibration-controlled beam fanning in BaTiO3 Ouyang,Y; Sun,CC; Hsu,CY; Yau,HF
    2003 Low alkaline contamination bottom antireflective coatings for both 193-and 157-nm lithography applications Chen,HL; Chuang,YF; Lee,CC; Hsieh,CI; Ko,FH; Wang,LA
    2003 Low-temperature Raman study of zinc-doped lithium niobate crystal powders Hu,ML; Chia,CT; Chang,JY; Tse,WS; Yu,JT
    2003 Measuring the thickness of opaque plane-parallel parts using an external cavity diode laser and a double-ended interferometer Lu,SH; Chiueh,CI; Lee,CC

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