鄰近類別 研究計畫 [36/36] 博碩士論文 [2881/2881] 考古題 [394/394] 類別統計 近3年內發表的文件: 0(0.00%) 含全文筆數: 951(100.00%) 文件下載次數統計 下載大於0次: 951(100.00%) 下載大於100次: 951(100.00%) 檔案下載總次數: 472490(22.74%) 最後更新時間: 2024-12-18 06:16 上傳排行 資料載入中..... 下載排行 資料載入中..... 最近上傳 Wide-stopband microstrip bandpass f... Vertical-cavity surface-emitting la... Thermal stability improvement by us... The improvement of GaN p-i-n UV sen... Study of tunneling currents through... Study of carrier transport by penta... Sliding mode control for unmatched ... Simulation of Si n-MOS inversion la... Si-diffused GaN for enhancernent-mo... Si/SiGe-based edge-coupled photodio...

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顯示項目251-275 / 951. (共39頁) << < 6 7 8 9 10 11 12 13 14 15 > >> 每頁顯示[10|25|50]項目

日期	題名	作者
2006	Frequency tunability of terahertz photonic transmitters	Kao,TF; Chang,HH; Chen,LJ; Lu,JY; Liu,AS; Yu,YC; Wu,RB; Liu,WS; Chyi,JI; Sun,CK
2006	Growth of gallium nitride nanorods by metalorganic molecular beam epitaxy	Kuo,SY; Kei,CC; Hsiao,CN; Chao,CK
2006	Photoexcitation effects on charge transports of Ge quantum-dot resonant tunneling diodes	Li,P. W.; Kuo,David M. T.; Hsu,Y. C.
2006	Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition	Hsieh,TP; Chang,HS; Chen,WY; Chang,WH; Hsu,TM; Yeh,NT; Ho,WJ; Chiu,PC; Chyi,JI
2006	Improving the compression and encryption of images using FPGA-based cryptosystems	Ou,SC; Chung,HY; Sung,WT
2006	Leaky-wave photodiodes with a partially p-doped absorption layer and a distributed Bragg reflector (DBR) for high-power and high-bandwidth-responsivity product performance	Chiu,WY; Shi,JW; Wang,WK; Wu,YS; Chan,YJ; Huang,YL; Xuan,R
2006	Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer	Hsueh,KP; Hsin,YM; Sheu,JK
2006	Quasi-constant-sensitivity VCO with offset-tuning PN junction varactor array	Lee SH,?Chiang YT,?Chiou HK
2006	Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communications	Shi,JW; Huang,HY; Shell,JK; Hsieh,SH; Wu,YS; Lu,JY; Huang,FH; Lai,WC
2006	Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs	Liao,YS; Shi,JW; Wu,YS; Kuo,HC; Feng,M; Lin,GR
2006	Pinholelike defects in multistack 1.3 mu m InAs quantum dot laser	Liu,WS; Chang,HL; Liu,YS; Chyi,JI
2006	RF power characteristics of SiGeHBTs at cryogenic temperatures	Hsieh,Meng-Wei; Hsin,Yue-Ming; Liang,Kung-Hao; Chan,Yi-Jen; Tang,Denny
2006	Reversible off-state breakdown walkout in passivated AlGaAs/InGaAs PHEMTs	Tang,WB; Hsin,YM
2006	Robustness analysis of discrete time-delay systems	Huang,CP; Juang,YT
2006	Robust integration for speech features	Huang,Kuo-Chang; Juang,Yau-Tarng; Chang,Wen-Chieh
2006	Room-temperature transient carrier transport in germanium single-hole/electron transistors	Liao,WM; Li,PW; Kuo,DMT; Lai,WT
2006	Si/SiGe-based edge-coupled photodiode with partially p-doped photoabsorption layer for high responsivity and high-power performance	Shi,JW; Chiu,PH; Huang,FH; Wu,YS; Lu,JY; Sun,CK; Liu,CW; Chen,PS
2006	Si-diffused GaN for enhancernent-mode GaN MOSFET on Si applications	Jang,S; Ren,F; Pearton,SJ; Gila,BP; Hlad,M; Abernathy,CR; Yang,H; Pan,CJ; Chyi,JI; Bove,P; Lahreche,H; Thuret,J
2006	Simulation of Si n-MOS inversion layer with Schrodinger-Poisson equivalent circuit model	Li,SJ; Chang,CC; Tsai,YT
2006	Sliding mode control for unmatched uncertain systems with totally invariant property and exponential stability	Tsai,YW; Mai,KH; Shyu,KK
2006	Study of carrier transport by pentacene thin-film transistors at high temperatures	Lo,PY; Pei,ZW; Hwang,JJ; Tseng,HY; Chan,YJ
2006	Study of tunneling currents through germanium quantum-dot single-hole and -electron transistors	Li,PW; Kuo,DMT; Liao,WM; Lai,WT
2006	The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure	Liu,SS; Li,PW; Lan,WH; Cheng,YC
2006	Thermal stability improvement by using Pd/NiO/Al/Ti/Au reflective ohmic contacts to p-GaN for flip-chip ultraviolet light-emitting diodes	Pan,CC; Chen,GT; Hsu,WJ; Lin,CW; Chyi,JI
2006	Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures	Shi,JW; Yen,JL; Jiang,CH; Chen,KM; Hung,TJ; Yang,YJ

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