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    Last Update: 2025-04-26 11:27

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    Showing items 31-40 of 4311. (432 Page(s) Totally)
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    DateTitleAuthors
    2025-01-06 探討記憶體裝置中老化效應對深度神經網路預測準確性之影響:分析策略與解決方法;Exploring the Impact of Aging Effects in Memory Devices on Deep Neural Networks: Analysis and Solutions 蔡瑩靜; Tsai, Ying-Jing
    2024-12-25 差速驅動輪式移動機器人輕量化設計與運動軌跡精確追蹤控制;Differential Drive Wheeled Mobile Robot Lightweight Design and Precise Tracking Control of Motion Trajectory 周娟安; Chou, Chuan-An
    2024-12-17 可程式化寬頻分數型頻率合成器模組與毫米波多容值共振並聯二極體切換器之研製;Design of Programmable Wideband Fractional Synthesizer Module and Millimeter-Wave Multi-Capacitance Resonance Shunt-Diode Switches 陳羿夫; Chen, Yi-Fu
    2024-12-03 透過氫電漿處理提升 FeFET 之耐久性、儲 存密度與讀取速度並改善 FeCAM 設計中的 穩定性與漢明距離;Enhancing FeFET Endurance、Storage Density、Read Speed through H2 Plasma Treatment, and Improving Stability and Hamming Distance in FeCAM Designs 黃子容; Huang, Zi-Rong
    2024-12-03 微型化雙頻平衡式微波被動電路設計;Miniaturized Dual-Band Balanced Microwave Passive Circuit Design 張威銍; Chang, Wei-Chih
    2024-11-28 利用混響室進行單天線效率與輻射發射量量測實驗:與模擬軟體及不同電磁環境比較;Measurement of Single Antenna Efficiency and Radiated Emission in a Reverberation Chamber: Comparison with Simulation Software and Different Electromagnetic Environments 李彥霆; Lee, Yan-Ting
    2024-11-27 可實現 2.3V大記憶視窗(每單元3位元)、可立即讀取並具有????^??次寫入之鐵電電晶體及其在機器學習之高精確度研究;Ferroelectric Transistor with a 2.3V Large Memory Window (3 bits per cell), Instant Readout, and 10˙ Write Cycles, and Its High Accuracy in Machine Learning Research 白家碩; Pai, Chia-Shuo
    2024-11-26 基於氮化鍺碲碳非砷化物選擇器的高熱穩定性、低電壓變異性及高循環耐久性 (>10¹¹) 的物理分析;The Physical Analysis of High Thermal Stability, Low Voltage Variability, and High Endurance (>10¹¹) Based on a Germanium Tellurium Carbon Nitride Non-Arsenide Selector 吳湧峰; Wu, Yung-Feng
    2024-11-26 實現全後段製程相容性、基於IGZO雙電晶體及鐵電電容器之非揮發性記憶體;Enabling Fully Back-End-of-Line Compatible in IGZO Based Two Transistor One Ferroelectric Capacitor (2T1F) Non-Volatile Memory 蔡堉秭; Tsai, Yu-Tzu
    2024-11-25 應用0.25 μm GaN/SiC HEMT於連續B類 X頻段功率放大器與K頻段 WIPD 覆晶功率放大器暨90奈米 CMOS FR3 寬頻發射器之研製;Design and Implementation of a 0.25 μm GaN/SiC HEMT Continuous Class-B X-Band Power Amplifier, K-Band WIPD Flip-Chip Power Amplifier, and 90-nm CMOS FR3 Wideband Transmitter 陳柏豪; Chen, Po-Hao

    Showing items 31-40 of 4311. (432 Page(s) Totally)
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