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    Showing items 231-240 of 3021. (303 Page(s) Totally)
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    DateTitleAuthors
    2024-06-25 具有周期性空缺的鋸齒狀石墨烯奈米帶的熱電效應;Thermoelectric Effects of Zigzag Graphene Nanoribbons with Periodic Vacancies. 李俊廷; Lee, Chun-Ting
    2024-06-25 庫倫阻塞效應在有限長度扶手椅石墨烯奈米帶熱電特性;Effect of Colomb Blockade on Thermoelectric Properties of Finite Armchair Graphene Nanoribbons 楊翰偉; Yang, Han-Wei
    2024-06-21 應用於第五代無線通訊之結合Cold-FET預失真線性化電路互補式金氧半導體堆疊式功率放大器暨25%責任週期I/Q發射機研製;Implementations on CMOS Stacked Power Amplifier with Cold-FET Predistortion Linearizer and 25% Duty Cycle I/Q Transmitter for Fifth-Generation Wireless Communication Applications 廖弘智; Liao, Hong-Zhi
    2024-06-18 多核心系統的老化與瞬態錯誤感知任務部署策略:壽命延長且節能的框架;Aging and Transient Error Aware Task Deployment Strategy for Multicore Systems: A Lifetime-Extened and Energy-Efficient Framework 陳政維; Chen, Zheng-Wei
    2024-06-17 用於佈線後階段電壓降優化的強化學習框架;A Reinforcement Learning Framework for IR-drop Optimization at Post Routing Stage 梁育銓; Liang, Yu-Chuan
    2024-06-13 微型化三頻毫米波被動電路設計;Miniaturized Tri-band Millimeter-wave Passive Circuit Design 劉沚宜; Liu, Chih-Yi
    2024-04-24 應力工程和表面能對p型氧化錫(SnO)寬能隙相穩定化的影響;Stabiliazation of Wide-band Gap Phase in p-Type Tin monoxide (SnO) by Strained Engineering and Surface Energy 李紹晨; Lee, Shao-Chen
    2024-04-22 實現瞬時讀取且長耐久性(>10^12次)之三位 元鐵電場效應電晶體製程技術與可靠度分析;Development and Reliability Analysis of 3 Bits-Per-Cell Ferroelectric FETs Achieving Immediate Read-After-Write and High Endurance (>10^12 Cycles) 陳昱廷; Chen, Yu-Ting
    2024-04-19 H2電漿處理之超薄IGZO種子層的低電壓 鐵電電容器以實現30ns/3V讀寫速度且高儲存密度之每單元3位元FeNAND快閃記憶體;H2 Plasma Treatment in IGZO-Based FeCAP for Enhancing Storage Capacity, Switching Speed, and Endurance/Retention 劉承瑞; Liu, Cheng-Rui
    2024-03-26 以高介電常數鈍化層提高氮化鎵高電子遷移率電晶體崩潰電壓之研究;Breakdown Voltage Enhancement of GaN HEMTs Using High-k Passivation Layers 洪子鈞; Hong, Zih-Jyun

    Showing items 231-240 of 3021. (303 Page(s) Totally)
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