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Items for Author "KUO,JM"
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Showing 10 items.
Collection
Date
Title
Authors
Bitstream
[電機工程研究所] 期刊論文
2006
37-GHz bandwidth monolithically integrated InPHBT/evanescently coupled photodiode
Huang,WK
;
Huang,SC
;
Chung,HW
;
Hsin,YM
;
Shi,JW
;
Kao,YC
;
Kuo,JM
[太空及遙測研究中心] 期刊論文
2003
The application of wavelets correlator for ship wake detection in SAR images
Kuo,JM
;
Chen,KS
[太空科學研究所 ] 期刊論文
2002
Ship wake detection in synthetic aperture radar images using a combination of a wavelet correlator and Radon transform
Kuo,JM
;
Chen,KS
[電機工程研究所] 期刊論文
2001
(AlxGa1-x)(0.5)In0.5P/In0.15Ga0.85As (x = 0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications
Yang,SC
;
Chiu,HC
;
Chan,YJ
;
Lin,HH
;
Kuo,JM
[電機工程研究所] 期刊論文
2001
RIE gate-recessed (Al0.3Ga0.7)(0.5)In0.5P/InGaAs double doped-channel FETs using CHF3+BCl3 mixing plasma
Yang,SC
;
Chiu,HC
;
Chien,FT
;
Chan,YJ
;
Kuo,JM
[電機工程研究所] 期刊論文
2000
High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance
Chiu,HC
;
Yang,SC
;
Chan,YJ
;
Kuo,JM
[電機工程研究所] 期刊論文
1995
HIGH-TEMPERATURE PERFORMANCE OF GA0.51IN0.49P/IN0.2GA0.8AS PSEUDOMORPHIC HEMTS WITH WSIX GATES
CHAN,YJ
;
YEH,TJ
;
KUO,JM
[電機工程研究所] 期刊論文
1994
HIGH-TEMPERATURE PERFORMANCE OF GAINP AND ALINP HEMTS WITH WSIX GATES
CHAN,YJ
;
KUO,JM
[電機工程研究所] 期刊論文
1994
IN0.49GA0.15P/IN0.15GA0.85AS HETEROSTRUCTURE PULSED DOPED-CHANNEL FETS
CHAN,YJ
;
YEH,TJ
;
KUO,JM
[物理研究所] 期刊論文
1993
CRYOGENIC AND HIGH-TEMPERATURE OPERATION OF AL0.52IN0.48P/IN0.2GA0.8AS HIGH-ELECTRON-MOBILITY TRANSISTORS
KUO,JM
;
CHAN,YJ
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