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    "LIN,RM"的相關文件 

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    顯示 11 項.

    類別 日期 題名 作者 檔案
    [光電科學與工程學系] 期刊論文 2010 InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer Tu,SH; Lan,CJ; Wang,SH; Lee,ML; Chang,KH; Lin,RM; Chang,JY; Sheu,JK
    [光電科學與工程學系] 期刊論文 2002 Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs Lin,RM; Nee,TE; Tsai,MC; Chang,YH; Fan,PL; Chang,RS
    [電機工程研究所] 期刊論文 1994 UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS HWANG,HP; SHIEH,JL; LIN,RM; CHYI,JI; TU,SL; PENG,CK; YANG,SJ
    [電機工程研究所] 期刊論文 1994 THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES YANG,MT; LIN,RM; CHAN,YJ; SHIEH,JL; CHYI,JI
    [電機工程研究所] 期刊論文 1994 MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS CHYI,JI; SHIEH,JL; LIN,RM; NEE,TE; PAN,JW
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS YANG,MT; CHAN,YJ; CHEN,CH; CHYI,JI; LIN,RM; SHIEH,JL
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS CHYI,JI; SHIEH,JL; WU,CS; LIN,RM; PAN,JW; CHAN,YJ; LIN,CH
    [電機工程研究所] 期刊論文 1994 BAND OFFSETS OF IN0.30GA0.70AS/IN0.29AL0.71AS HETEROJUNCTION GROWN ON GAAS SUBSTRATE SHIEH,JL; CHYI,JI; LIN,RJ; LIN,RM; PAN,JW
    [電機工程研究所] 期刊論文 1995 SCHOTTKY-BARRIER HEIGHTS OF INXAL1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.35) EPILAYERS ON GAAS CHYI,JI; SHIEH,JL; LIN,RJ; PAN,JW; LIN,RM
    [電機工程研究所] 期刊論文 1996 Strain relaxation and crystallographic tilt of compositional graded InxGa1-xAs and InxAl1-xAs (0<x<0.3) epilayers grown on GaAs substrates Shieh,JL; Chyi,JI; Pan,JW; Lin,RM
    [電機工程研究所] 期刊論文 1996 Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates Chyi,JI; Shieh,JL; Pan,JW; Lin,RM

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