English  |  正體中文  |  简体中文  |  Items with full text/Total items : 80990/80990 (100%)
Visitors : 42122804      Online Users : 973
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
    •  Adv. Search
    Home ‧ Login ‧ Upload ‧ Help ‧ About ‧ Administer Goto mobile version

    Category

    Loading community tree, please wait....

    Year

    Loading year class tree, please wait....

    Items for Author "LIN,RM" 

    Return to Browse by Author

    Showing 11 items.

    Collection Date Title Authors Bitstream
    [電機工程研究所] 期刊論文 1995 SCHOTTKY-BARRIER HEIGHTS OF INXAL1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.35) EPILAYERS ON GAAS CHYI,JI; SHIEH,JL; LIN,RJ; PAN,JW; LIN,RM
    [電機工程研究所] 期刊論文 1994 MOLECULAR-BEAM EPITAXIAL-GROWTH OF INXAL1-XAS ON GAAS CHYI,JI; SHIEH,JL; LIN,RM; NEE,TE; PAN,JW
    [電機工程研究所] 期刊論文 1996 Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates Chyi,JI; Shieh,JL; Pan,JW; Lin,RM
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF IN0.3GA0.7AS/IN0.29AL0.71AS HETEROSTRUCTURES GROWN ON GAAS USING INALAS BUFFERS CHYI,JI; SHIEH,JL; WU,CS; LIN,RM; PAN,JW; CHAN,YJ; LIN,CH
    [電機工程研究所] 期刊論文 1994 UNSTRAINED IN0.3GA0.7AS/IN0.29AL0.71AS RESONANT-TUNNELING DIODES GROWN ON GAAS HWANG,HP; SHIEH,JL; LIN,RM; CHYI,JI; TU,SL; PENG,CK; YANG,SJ
    [光電科學與工程學系] 期刊論文 2002 Thickness-dependent renormalization of strain effects on self-organized InAs quantum dots grown on GaAs Lin,RM; Nee,TE; Tsai,MC; Chang,YH; Fan,PL; Chang,RS
    [電機工程研究所] 期刊論文 1994 BAND OFFSETS OF IN0.30GA0.70AS/IN0.29AL0.71AS HETEROJUNCTION GROWN ON GAAS SUBSTRATE SHIEH,JL; CHYI,JI; LIN,RJ; LIN,RM; PAN,JW
    [電機工程研究所] 期刊論文 1996 Strain relaxation and crystallographic tilt of compositional graded InxGa1-xAs and InxAl1-xAs (0<x<0.3) epilayers grown on GaAs substrates Shieh,JL; Chyi,JI; Pan,JW; Lin,RM
    [光電科學與工程學系] 期刊論文 2010 InGaN gallium nitride light-emitting diodes with reflective electrode pads and textured gallium-doped ZnO contact layer Tu,SH; Lan,CJ; Wang,SH; Lee,ML; Chang,KH; Lin,RM; Chang,JY; Sheu,JK
    [電機工程研究所] 期刊論文 1994 CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS YANG,MT; CHAN,YJ; CHEN,CH; CHYI,JI; LIN,RM; SHIEH,JL
    [電機工程研究所] 期刊論文 1994 THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES YANG,MT; LIN,RM; CHAN,YJ; SHIEH,JL; CHYI,JI

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期：8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明